Engineering Papers⌕ Search

Engineering topics

Brazhkin, V. V.

Publications and source records attributed to Brazhkin, V. V..

8 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Quantum Isotope Effect in Silicon at Low Temperatures

High-precision studies of Raman scattering in isotopically pure {sup 28}Si, {sup 29}Si, {sup 30}Si single crystals have been performed in the temperature range from 8 to 300 K. It has been found that a difference of about (0.4 ± 0.1) cm{sup –1} observed at temperatures T ≤ 100 K between the normalized Raman frequencies of the {sup 28}Si and {sup 30}Si isotopes measured with an accuracy of 0.1 cm{sup –1} is certainly due to quantum effects damping with increasing temperature. The possibility of observing quantum isotope effects in germanium has been estimated using experimental data on isotope effects in diamond and silicon.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Universal Features of the Electron Transport in Tungsten–Carbon Nanocomposites

The wide-temperature-range (4.2–300 K) electron transport had being studied in tungsten–carbon nanocomposites in tungsten concentration interval 0.1–0.45. It is shown that electron transport in the nanocomposites possesses the features of the universality, manifested in the form of power-law dependences of the conductivity on temperature in the two characteristic temperature intervals. The critical temperature separating the intervals is about 25–30 K and has no appreciable dependence on the value of tungsten concentration in nanocomposites. The power exponents of the temperature dependences of the conductivity in both temperature intervals are the non-monotonic functions of the tungsten concentration and vary in the range 0–2 with a wide minimum at 0.2 and 0.25 of tungsten content in the high- and low-temperature intervals, respectively. The observed power-law temperature corrections to the conductivity are simulated and discussed within the effective medium approximation in the framework of the model of the inelastic tunneling of the electrons between the conducting clusters in the tungsten–carbon nanocomposites.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2017

High-precision measurements of the compressibility and the electrical resistivity of bulk g-As{sub 2}Te{sub 3} glasses at a hydrostatic pressure up to 8.5 GPa

High-precision studies of the volume and the electrical resistivity of g-As{sub 2}Te{sub 3} glasses at a high hydrostatic pressure up to 8.5 GPa at room temperature are performed. The glasses exhibit elastic behavior in compression only at a pressure up to 1 GPa, and a diffuse structural transformation and inelastic density relaxation (logarithmic in time) begin at higher pressures. When the pressure increases further, the relaxation rate passes through a sharp maximum at 2.5 GPa, which is accompanied by softening the relaxing bulk modulus, and then decreases, being noticeable up to the maximum pressure. When pressure is relieved, an unusual inflection point is observed in the baric dependence of the bulk modulus near 4 GPa. The polyamorphic transformation is only partly reversible and the residual densification after pressure release is 2%. In compression, the electrical resistivity of the g-As{sub 2}Te{sub 3} glasses decreases exponentially with increasing pressure (at a pressure up to 2 GPa); then, it decreases faster by almost three orders of magnitude in the pressure range 2–3.5 GPa. At a pressure of 5 GPa, the electrical resistivity reaches 10{sup –3} Ω cm, which is characteristic of a metallic state; this resistivity continues to decrease with increasing pressure and reaches 1.7 × 10{sup –4} Ω cm at 8.1 GPa. The reverse metal–semiconductor transition occurs at a pressure of 3 GPa when pressure is relieved. When the pressure is decreased to atmospheric pressure, the electrical resistivity of the glasses is below the initial pressure by two–three orders of magnitude. Under normal conditions, both the volume and the electrical resistivity relax to quasi-equilibrium values in several months. Comparative structural and Raman spectroscopy investigations demonstrate that the glasses subjected to high pressure have the maximum chemical order. The glasses with a higher order have a lower electrical resistivity. The polyamorphism in the As{sub 2}Te{sub 3} glasses is caused by both structural changes and chemical ordering. The g-As{sub 2}Te{sub 3} compound is the first example of glasses, where the reversible metallization under pressure has been studied under hydrostatic conditions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Experimental evidence of the Frenkel line in supercritical neon

Recent research suggests that the supercritical state consists of liquidlike and gaslike states where particle dynamics and key system properties are qualitatively different. We report experimental evidence of the structural crossover in supercritical neon at pressure and temperature conditions significantly exceeding the critical point values: 250 P c and 6.6 T c . The experimental results show a crossover of the medium-range order structure evidenced by the change of the structure factor with pressure. We also observe the crossover of the short-range order structure indicated by changes in the coordination number. The relative width of the crossover is fairly narrow and is smaller than 10–12% in pressure and temperature. Here, by comparing our experimental results with molecular dynamics simulations, we suggest that the observed crossover can be attributed to the Frenkel line and discuss the relationship between the structural crossover and qualitative changes of dynamical and thermodynamic properties of supercritical matter.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Raman spectroscopy of isotopically pure ({sup 12}C, {sup 13}C) and isotopically mixed ({sup 12.5}C) diamond single crystals at ultrahigh pressures

The Raman scattering by isotopically pure {sup 12}C and {sup 13}C diamond single crystals and by isotopically mixed {sup 12.5}C diamond single crystals is studied at a high accuracy. The studies are performed over a wide pressure range up to 73 GPa using helium as a hydrostatic pressure-transferring medium. It is found that the quantum effects, which determine the difference between the ratio of the Raman scattering frequencies in the {sup 12}C and {sup 13}C diamonds and the classical ratio (1.0408), increase to 30 GPa and then decrease. Thus, inversion in the sign of the quantum contribution to the physical properties of diamond during compression is detected. Our data suggest that the maximum possible difference between the bulk moduli of the {sup 12}C and {sup 13}C diamonds is 0.15%. The investigation of the isotopically mixed {sup 12.5}C diamond shows that the effective mass, which determines the Raman frequency, decreases during compression from 12.38 au at normal pressure to 12.33 au at 73 GPa.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Solid-state diffusion in amorphous zirconolite

We discuss how structural disorder and amorphization affect solid-state diffusion, and consider zirconolite as a currently important case study. By performing extensive molecular dynamics simulations, we disentangle the effects of amorphization and density, and show that a profound increase of solid-state diffusion takes place as a result of amorphization. Importantly, this can take place at the same density as in the crystal, representing an interesting general insight regarding solid-state diffusion. We find that decreasing the density in the amorphous system increases pre-factors of diffusion constants, but does not change the activation energy in the density range considered. We also find that atomic species in zirconolite are affected differently by amorphization and density change. Our microscopic insights are relevant for understanding how solid-state diffusion changes due to disorder and for building predictive models of operation of materials to be used to encapsulate nuclear waste.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗