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Brandhorst, H., Jr.

Publications and source records attributed to Brandhorst, H., Jr..

Space commercialization and power system technology

The development and application of power and energy technologies important to the commercialization of space is discussed, stressing the significance of these technologies to space transportation systems, on-orbit services and on-orbit commercial production and processing ventures. Energy conversion systems examined include solar photovoltaic systems, solar thermal dynamic power systems, and nuclear power systems. Energy storage systems include electrochemical systems, inertial storage systems, and magnetic energy storage systems. In addition, power management and distribution systems used in space commercialization and NASA programs for the commercial development of space are discussed.

Brandhorst, H., Jr.

Space solar cells: High efficiency and radiation damage

The progress and status of efforts to increase the end-of-life efficiency of solar cells for space use is assessed. High efficiency silicon solar cells, silicon solar cell radiation damage, GaAs solar cell performance and radiation damage and 30 percent devices are discussed.

Brandhorst, H., Jr.

Radiation damage in high voltage silicon solar cells

Three high open-circuit voltage cell designs based on 0.1 ohm-cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th power/sq cm. Of the three cell designs, radiation induced degradation was greatest in the high-low emitter (HLE cell). The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short-circuit current and open-circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of an HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon-oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.

Weinberg, I.