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Bose, Deepak

Publications and source records attributed to Bose, Deepak.

42 records · Page 3

A Self-Consistent Plasma-Sheath Model for the Inductively Coupled Plasma Reactor

Accurate determination of ion flux on a wafer requires a self-consistent, multidimensional modeling of plasma reactor that adequately resolves the sheath region adjoining the wafer. This level of modeling is difficult to achieve since non-collisional sheath lengths are usually 3-4 orders of magnitude smaller than the reactor scale. Also, the drift-diffusion equations used for ion transport becomes invalid in the sheath since the ion frictional force is no longer in equilibrium with drift and diffusion forces. The alternative is to use a full momentum equation for each ionic species. In this work we will present results from a self-consistent reactor scale-sheath scale model for 2D inductively coupled plasmas. The goal of this study is to improve the modeling capabilities and assess the importance of additional physics in determining important reactor performance features, such as the ion flux uniformity, coil frequency and configuration effects, etc. Effect of numerical dissipation on the solution quality will also be discussed.

Bose, Deepak

A Coupled Plasma-Sheath Model for High Density Sources

High density, low pressure plasmas are used for etching and deposition in microelectronics fabrication processes. The process characteristics are strongly determined by the ion energy distribution (IED) and the ion flux arriving at the substrate that are responsible for desorption of etch products and neutral dissociation at the surface. The ion flux and energy are determined by a self- consistent modeling of the bulk plasma, where the ions and the neutral radicals are produced, and the sheath, where the ions are accelerated. Due to their widely different time scales, it is a formidable task to self-consistently resolve non-collisional sheath in a high density bulk plasma model. In this work, we first describe a coupled plasma-sheath model that attempts to resolve the non-collisional sheath in a reactor scale model. Second, we propose a semianalytical radio frequency (RF) sheath model to improve ion dynamics.

Bose, Deepak

Ion Transport Modeling in Non-Collisional RF Sheaths

A reactor scale ICP plasma model does not adequately resolve the submillimeter scale rf sheaths due to severe disparities in length and times scales. These non-collisional sheaths determine the spread in the ion bombardment energy distribution on the wafer. Analytical models based on "damped potential" has been used by various authors to simplify sheath modeling. However, inherent in these models are some assumptions that may be invalid. In this work we show that simplifying assumptions such as a uniform ion flux may be in error by as much as 200% at 13.56MHz. This work involves solving ion transport in non-collisional rf sheaths. A comprehensive study of the dependence of ion flux and energy on uncertainties in the sheath-presheath (i.e. sheath thickness) boundary will also be done.

Meyyappan, M.

ICP Reactor Modeling: CF4 Discharge

Inductively coupled plasma (ICP) reactors are widely used now for etching and deposition applications due to their simpler design compared to other high density sources. Plasma reactor modeling has been playing an important role since it can, in principle, reduce the number of trial and error iterations in the design process and provide valuable understanding of mechanisms. Fluorocarbon precursors have been the choice for oxide etching. We have data available on CF4 from our laboratory. These are current voltage characteristics, La.ngmuir probe data, UV-absorption, and mass spectrometry measurements in a GEC-ICP reactor. We have developed a comprehensive model for ICP reactors which couples plasma generation and transport and neutral species dynamics with the gas flow equations. The model has been verified by comparison with experimental results for a nitrogen discharge in an ICP reactor. In the present work, the model has been applied to CF4 discharge and compared to available experimental data.

Bose, Deepak

A Coupled Plasma Dynamics and Gas Flow Model for Semiconductor Processing

A continuum modeling approach by self-consistently coupling plasma dynamics and gas flow will be presented for the analysis of high density plasma reactors. Experimental data shows that gas flow distribution affects the etch rate uniformity even at low pressures (6-20 mTorr) and flow rates (20-70 sccm). This study will investigate the effects of gas flow and gas energy on bulk plasma densities and temperatures using a continuum model. The model solves multidimensional equations of mass balance for neutrals and ions, gas momentum, separate energy equations for electrons and neutrals and Maxwell's equations for power coupling. A test case of N2 plasma in a 300mm TCP etch reactor, for which hybrid model and Langmuir probe data are available, is chosen for this analysis. Our preliminary results show that modeling gas flow and energy improves the predictions of electron density and its spatial variation in the reactor when compared with the experimental data. The aim of this study is to identify the operating conditions for the TCP reactor when a self-consistent modeling of gas flow is important.

Bose, Deepak

A Transport Model for Non-Local Heating of Electrons in ICP Reactors

A new model has been developed for non-local heating of electrons in ICP reactors, based on a hydrodynamic approach. The model has been derived using the electron momentum conservation in azimuthal direction with electromagnetic and frictional forces respectively as driving force and damper of harmonic oscillatory motion of electrons. The resulting transport equations include the convection of azimuthal electron momentum in radial and axial directions, thereby accounting for the non-local effects. The azimuthal velocity of electrons and the resulting electrical current are coupled to the Maxwell's relations, thus forming a self-consistent model for non-local heating. This model is being implemented along with a set of Navier-Stokes equations for plasma dynamics and gas flow to simulate low-pressure (few mTorr's) ICP discharges. Characteristics of nitrogen plasma in a TCP 300mm etch reactor is being studied. The results will be compared against the available Langmuir probe measurements.

Chang, C. H.