Engineering topics

Blouke, Morley M.

Publications and source records attributed to Blouke, Morley M..

7 records

NASA NTRS1990

Proton radiation effects on multi-pinned-phased CCDs

Three Tektronix 1024 x 1024 multi-pinned-phased (MPP) charge coupled devices were irradiated with protons to obtain data on CCD performance degradation in a proton radiation environment. The devices were irradiated with a spectrum of energies up to 120 MeV, simulating the total radiation dose of a long-term space experiment. Basic parameters such as charge transfer efficiency, dark current, noise, and full well were measured before and after irradiation. A test was also performed to determine the effectiveness of various thicknesses of tantalum shielding in protecting the CCD from damage. Dark current increase and CTE degradation were the most noticeable effects of proton radiation. This paper will present the objectives, test data, and conclusions of the proton testing, and will identify future testing to be performed.

Murata-Seawalt, D.↗

NASA NTRS1990

Charge transfer efficiency measurements at low signal levels on STIS/SOHO TK1024 CCD's

Charge transfer efficiency (CTE) test methods are reviewed, and the results and conclusions of the tests are given. The test methods have been utilized to describe the CTE characteristics of the Tektronix 1024 by 1024 CCD to optimize low dark current, low readout noise, and high CTE at low signal levels. CTE modelling is described, and three test methods are set forth and compared. The Fe-55 X-ray response method utilizes the response of a CCD to X-ray photons from the radioactive source Fe-55. The extended pixel edge response method employs the measurement of the charge lost to successive pixels by a known initial signal as it is shifted through the array. The charge injection method consists of charge injection through the output amplifier reset transistor. These measurements were performed on several devices with known CTEs. The CTEs are found to be in agreement for the three methods, making application and test requirements the principal criteria for their use.

Orbock, J. D.↗

NASA NTRS1990

Effects of transistor geometry on CCD output sensitivity

This paper discusses recent progress in the understanding of the fabrication of low noise floating diffusion output amplifiers for special purpose charge-coupled devices. Emphasis has been given to reducing the total node capacitance and increasing the output sensitivity. Measurements of noise on experimental devices has yielded noise less than 3 electrons rms at 50 kpixel data rate.

Kim, H.↗

NASA NTRS1990

A quadrant-CCD star tracker

The characteristics of a quadrant-CCD designed for pointing and tracking are discussed with reference to its use in an adaptive optics program. The quadrant-CCD is used to correct stellar image motion proceeding from atmospheric turbulence by means of a system in which a sensor measures the image offset and sends data to a high-speed tip/tilt mirror. The design and control of the device are detailed, including four 100-micron-square pixels, the quadrant architecture, controller electronics, and data acquisition computer and interface. The transfer function is set forth in the x and y directions, and transfer curves are shown. A laboratory simulation of random image motion was conducted to evaluate the performance of the quadrant-CCD as an image motion sensor, and the experimental results are presented. The suitability of the quadrant-CCD for space-based pointing and tracking uses is demonstrated by this test and two earlier theoretical studies. Some future developments which improve performance capabilities are mentioned.

Clampin, M.↗

NASA NTRS1987

Large format, high resolution images sensors

The performance requirements for scientific-quality CCDs are discussed, focusing on the design of two devices, and the progress toward achieving the desired performance is discussed. These devices are intended for rear-illuminated applications and have 512 x 512 and 2048 x 2048 pixel formats. The thinned 10 to 20 micron thick Si membrane is fully supported by a unique glass ceramic substrate. Quantum efficiencies of greater than 70 percent at 700 nm and greater than 40 percent at wavelengths less than 400 nm have been measured on a test device. Dark currents as low as 6 pA/sq cm also have been measured recently.

Blouke, Morley M.↗

NASA NTRS1987

Current status of the 800 x 800 charge-coupled-device image sensor

This paper presents an updated version of a previous paper describing a three-phase 800 x 800 charge-coupled-device image sensor. Although this device was originally designed to be used as the sensor for the Wide Field/Planetary Camera on the Hubble Space Telescope, it is now being used as the detector of choice on many ground-based telescopes. The performance of the device is reviewed, and the important contributions it has made to the understanding of general CCD performance is indicated.

Blouke, Morley M.↗

NASA NTRS1987

Scientific charge-coupled devices

The charge-coupled device dominates an ever-increasing variety of scientific imaging and spectroscopy applications. Recent experience indicates, however, that the full potential of CCD performance lies well beyond that realized in devices currently available.Test data suggest that major improvements are feasible in spectral response, charge collection, charge transfer, and readout noise. These properties, their measurement in existing CCDs, and their potential for future improvement are discussed in this paper.

Janesick, James R.↗