Next Generation Infrared Spectrometers for Solar System Exploration
No abstract provided
Fraeman, Abigail↗
Engineering topics
Blacksberg, Jordana
Publications and source records attributed to Blacksberg, Jordana.
Silicon Carbide Magnetoresistive Magnetometer with Electrically Detected Magnetic Resonance Self-Calibration Feature for Space Science Applications
No abstract available
Cochrane, Corey J.↗
Miniature Tunable Laser Spectrometers for Quantifying Atmospheric Trace Gases, Water Resources, Earth Back-Contamination, and In Situ Resource Utilization
The Tunable Laser Spectrometers (TLS) technique has seen wide applicability in gas measurement and analysis for atmospheric analysis, industrial, commercial and health monitoring and space applications. In Earth science using balloons and aircraft over 2 decades, several groups (JPL, NASA Langley & Ames, NOAA, Harvard U., etc) have demonstrated the technique for ozone hole studies, lab kinetics measurements, cloud physics and transport, climate change in the ice record. The recent availability of high-power (mW) room temperature lasers (TDL, IC, QC) has enabled miniaturized, high-sensitivity spectrometers for industry and space (1) Mars, Titan, Venus, Saturn, Moon (2) Commercial isotope ratio spectrometers are replacing bulkier, complex isotope ratio mass spectrometers.
Tunable laser spectrometers (TLS)↗
Method for growing a back surface contact on an imaging detector used in conjunction with back illumination
A method is provided for growing a back surface contact on an imaging detector used in conjunction with back illumination. In operation, an imaging detector is provided. Additionally, a back surface contact (e.g. a delta-doped layer, etc.) is grown on the imaging detector utilizing a process that is performed at a temperature less than 450 degrees Celsius.
Blacksberg, Jordana↗
Simultaneous Spectral Temporal Adaptive Raman Spectrometer - SSTARS
Raman spectroscopy is a prime candidate for the next generation of planetary instruments, as it addresses the primary goal of mineralogical analysis, which is structure and composition. However, large fluorescence return from many mineral samples under visible light excitation can render Raman spectra unattainable. Using the described approach, Raman and fluorescence, which occur on different time scales, can be simultaneously obtained from mineral samples using a compact instrument in a planetary environment. This new approach is taken based on the use of time-resolved spectroscopy for removing the fluorescence background from Raman spectra in the laboratory. In the SSTARS instrument, a visible excitation source (a green, pulsed laser) is used to generate Raman and fluorescence signals in a mineral sample. A spectral notch filter eliminates the directly reflected beam. A grating then disperses the signal spectrally, and a streak camera provides temporal resolution. The output of the streak camera is imaged on the CCD (charge-coupled device), and the data are read out electronically. By adjusting the sweep speed of the streak camera, anywhere from picoseconds to milliseconds, it is possible to resolve Raman spectra from numerous fluorescence spectra in the same sample. The key features of SSTARS include a compact streak tube capable of picosecond time resolution for collection of simultaneous spectral and temporal information, adaptive streak tube electronics that can rapidly change from one sweep rate to another over ranges of picoseconds to milliseconds, enabling collection of both Raman and fluorescence signatures versus time and wavelength, and Synchroscan integration that allows for a compact, low-power laser without compromising ultimate sensitivity.
Blacksberg, Jordana↗
Characterization and Absolute QE Measurements of Delta-Doped N-Channel and P-Channel CCDs
In this paper we present the methodology for making absolute quantum efficiency (QE) measurements from the vacuum ultraviolet (VUV) through the near infrared (NIR) on delta-doped silicon CCDs. Delta-doped detectors provide an excellent platform to validate measurements through the VUV due to their enhanced UV response. The requirements for measuring QE through the VUV are more strenuous than measurements in the near UV and necessitate, among other things, the use of a vacuum monochromator, and good camera vacuum to prevent chip condensation, and more stringent handling requirements. The system used for these measurements was originally designed for deep UV characterization of CCDs for the WF/PC instrument on Hubble and later for Cassini CCDs.
Jacquot, Blake C.↗
Delta-Doped High Purity Silicon UV-NIR CCDs with High QE and Low Dark Current
Delta doping process was developed on p-channel CCDs for MIDEX-Orion and JDEM/SNAP and was applied to large format (2k x4k) CCDs. Delta doping is applied to fully-fabricated CCDs (complete with Al metallization). High QE and low dark current is demonstrated with delta doped p-channel CCDs. In-house AR coating is demonstrated. Advantages include: Delta doping enables high QE and stability across the entire spectral range attainable with silicon. Delta doping is a low temperature process and is compatible with fully-fabricated detector arrays. Same base device for Orion two channels. High radiation tolerance and no thinning requirements of high purity p-channel. CCDs are additional advantages.
Orion↗
Delta Doping High Purity CCDs and CMOS for LSST
A viewgraph presentation describing delta doping high purity CCD's and CMOS for LSST is shown. The topics include: 1) Overview of JPL s versatile back-surface process for CCDs and CMOS; 2) Application to SNAP and ORION missions; 3) Delta doping as a back-surface electrode for fully depleted LBNL CCDs; 4) Delta doping high purity CCDs for SNAP and ORION; 5) JPL CMP thinning process development; and 6) Antireflection coating process development.
CMOS↗
Enhanced quantum efficiency of high-purity silicon imaging detectors by ultralow temperature surface modification using Sb doping
A low temperature process for Sb doping of silicon has been developed as a backsurface treatment for high-purity n-type imaging detectors. Molecular beam epitaxy (MBE) is used to achieve very high dopant incorporation in a thin, surface-confined layer. The growth temperature is kept below 450 (deg)C for compatibility with Al-metallized devices. Imaging with MBE-modified 1kx1k charge coupled devices (CCDs) operated in full depletion has been demonstrated. Dark current is comparable to the state-of-the-art process, which requires a high temperature step. Quantum efficiency is improved, especially in the UV, for thin doped layers placed closer to the backsurface. Near 100% internal quantum efficiency has been demonstrated in the ultraviolet for a CCD with a 1.5 nm silicon cap layer.
charged coupled devices (CCDs)↗
Enhanced quantum efficiency of high-purity silicon imaging detectors by ultralow temperature surface modification using Sb doping
A low temperature process for Sb doping of silicon has been developed as a backsurface treatment for high-purity n-type imaging detectors. Molecular beam epitaxy (MBE) is used to achieve very high dopant incorporation in a thin, surface-confined layer. The growth temperature is kept below 450 °C for compatibility with Al-metallized devices. Imaging with MBE-modified 1kx1k charge coupled devices ((CCDs) operated in full depletion has been demonstrated. Dark current is comparable to the state-of-the-art process, which requires a high temperature step. Quantum efficiency is improved, especially in the UV, for thin doped layers placed closer to the backsurface. Near 100% internal quantum efficiency has been demonstrated in the ultraviolet for a CCD with a 1.5 nm silicon cap layer.
Nikzad, Shouleh↗
Ultra-Low-Temperature Homoepitaxial Growth of Sb-Doped Silicon
An ultra-low-temperature process for homoepitaxial growth of high-quality, surface-confined, Sb-doped silicon layers is presented. Non-equilibrium growth by molecular beam epitaxy (MBE) is used to achieve dopant incorporation in excess of 2x10(exp 14) per sq cm in a thin, surface-confined layer. Sb surface segregation larger than expected from theoretical models was observed, in agreement with other experimental works. Furthermore, this work details an entirely low-temperature process (less than 450 degree C) that can be applied to fully processed and aluminum-metallized silicon devices. One application of this process is the formation of a back-surface electrode for back-illuminated high-purity silicon imaging arrays.
Molecular beam epitaxy↗
N-Type delta Doping of High-Purity Silicon Imaging Arrays
A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including metallization. The success of the process depends on accurate temperature control, surface treatment, growth of high-quality crystalline silicon, and precise control of thicknesses of layers. MBE affords the necessary nanometer- scale control of the placement of atoms for delta doping. More specifically, the process consists of MBE deposition of a thin silicon buffer layer, the n-type delta doping layer, and a thin silicon cap layer. The n dopant selected for initial experiments was antimony, but other n dopants as (phosphorus or arsenic) could be used. All n-type dopants in silicon tend to surface-segregate during growth, leading to a broadened dopant-concentration- versus-depth profile. In order to keep the profile as narrow as possible, the substrate temperature is held below 300 C during deposition of the silicon cap layer onto the antimony delta layer. The deposition of silicon includes a silicon- surface-preparation step, involving H-termination, that enables the growth of high-quality crystalline silicon at the relatively low temperature with close to full electrical activation of donors in the surface layer.
Blacksberg, Jordana↗