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Biegel, Bryan

Publications and source records attributed to Biegel, Bryan.

At least 55 records · Page 3

High-Order Central WENO Schemes for Multi-Dimensional Hamilton-Jacobi Equations

We present new third- and fifth-order Godunov-type central schemes for approximating solutions of the Hamilton-Jacobi (HJ) equation in an arbitrary number of space dimensions. These are the first central schemes for approximating solutions of the HJ equations with an order of accuracy that is greater than two. In two space dimensions we present two versions for the third-order scheme: one scheme that is based on a genuinely two-dimensional Central WENO reconstruction, and another scheme that is based on a simpler dimension-by-dimension reconstruction. The simpler dimension-by-dimension variant is then extended to a multi-dimensional fifth-order scheme. Our numerical examples in one, two and three space dimensions verify the expected order of accuracy of the schemes.

Bryson, Steve↗

Modeling of Gate Bias Modulation in Carbon Nanotube Field-Effect-Transistors

The threshold voltages of a carbon nanotube (CNT) field-effect transistor (FET) are derived and compared with those of the metal oxide-semiconductor (MOS) FETs. The CNT channel is so thin that there is no voltage drop perpendicular to the gate electrode plane, which is the CNT diameter direction, and this makes the CNTFET characteristics quite different from those in MOSFETs. The relation between the voltage and the electrochemical potentials, and the mass action law for electrons and holes are examined in the context of CNTs, and it is shown that the familiar relations are still valid because of the macroscopic number of states available in the CNTs. This is in sharp contrast to the cases of quantum dots. Using these relations, we derive an inversion threshold voltage V(sub Ti) and an accumulation threshold voltage V(sub Ta) as a function of the Fermi level E(sub F) in the channel, where E(sub F) is a measure of channel doping. V(sub Ti) of the CNTFETs has a much stronger dependence than that of MOSFETs, while V(sub Ta)s of both CNTFETs and MOSFETs depend quite weakly on E(sub F) with the same functional form. This means the transition from normally-off mode to normally-on mode is much sharper in CNTFETs as the doping increases, and this property has to be taken into account in circuit design.

Yamada, Toshishige↗

Backtracking and Re-execution in the Automatic Debugging of Parallelized Programs

In this work we describe a new approach using relative debugging to find differences in computation between a serial program and a parallel version of th it program. We use a combination of re-execution and backtracking in order to find the first difference in computation that may ultimately lead to an incorrect value that the user has indicated. In our prototype implementation we use static analysis information from a parallelization tool in order to perform the backtracking as well as the mapping required between serial and parallel computations.

Matthews, Gregory↗

Memory-Intensive Benchmarks: IRAM vs. Cache-Based Machines

The increasing gap between processor and memory performance has lead to new architectural models for memory-intensive applications. In this paper, we explore the performance of a set of memory-intensive benchmarks and use them to compare the performance of conventional cache-based microprocessors to a mixed logic and DRAM processor called VIRAM. The benchmarks are based on problem statements, rather than specific implementations, and in each case we explore the fundamental hardware requirements of the problem, as well as alternative algorithms and data structures that can help expose fine-grained parallelism or simplify memory access patterns. The benchmarks are characterized by their memory access patterns, their basic control structures, and the ratio of computation to memory operation.

Biswas, Rupak↗

Modeling of Carbon Nanotube Schottky Barrier Modulation Due to Oxidation

A model is proposed for the experimentally observed lower Schottky barrier for holes in air than in vacuum at a metallic electrode - semiconducting carbon nanotube (CNT) junction. In oxidation occurring in air, the negatively charged oxygen molecules on a material usually enhance the surface dipole and provide stronger electron confinement within the bulk. Thus the CNT electron affinity will increase in air. Then the Schottky barrier for holes will have to increase according to the standard band-alignment theory, but this is against the experiment. In order to overcome this difficulty, we propose a new Schottky barrier model, assuming there is a transition region between the electrode and the CNT and an appreciable potential can drop there. The role of the oxidation is to increase this potential drop with negatively charged oxygen molecules, leading to a lower Schottky barrier for holes. This mechanism prevails for both p- and n-CNTs. The model consistently explains all the reported CNT device experiments.

Yamada, Toshishige↗

Performance of OVERFLOW-D Applications based on Hybrid and MPI Paradigms on IBM Power4 System

This report briefly discusses our preliminary performance experiments with parallel versions of OVERFLOW-D applications. These applications are based on MPI and hybrid paradigms on the IBM Power4 system here at the NAS Division. This work is part of an effort to determine the suitability of the system and its parallel libraries (MPI/OpenMP) for specific scientific computing objectives.

Djomehri, M. Jahed↗

Thermal Expansion and Diffusion Coefficients of Carbon Nanotube-Polymer Composites

Classical molecular dynamics (MD) simulations employing Brenner potential for intra-nanotube interactions and van der Waals forces for polymer-nanotube interface have been used to investigate thermal expansion and diffusion characteristics of carbon nanotube-polyethylene composites. Addition of carbon nanotubes to polymer matrix is found to significantly increase the glass transition temperature Tg, and thermal expansion and diffusion coefficients in the composite above Tg. The increase has been attributed to the temperature dependent increase of the excluded volume for the polymer chains, and the findings could have implications in the composite processing, coating and painting applications.

Wei, Chengyu↗

Combining Flux Balance and Energy Balance Analysis for Large-Scale Metabolic Network: Biochemical Circuit Theory for Analysis of Large-Scale Metabolic Networks

Predicting behavior of large-scale biochemical metabolic networks represents one of the greatest challenges of bioinformatics and computational biology. Approaches, such as flux balance analysis (FBA), that account for the known stoichiometry of the reaction network while avoiding implementation of detailed reaction kinetics are perhaps the most promising tools for the analysis of large complex networks. As a step towards building a complete theory of biochemical circuit analysis, we introduce energy balance analysis (EBA), which compliments the FBA approach by introducing fundamental constraints based on the first and second laws of thermodynamics. Fluxes obtained with EBA are thermodynamically feasible and provide valuable insight into the activation and suppression of biochemical pathways.

Beard, Daniel A.↗

Support for Debugging Automatically Parallelized Programs

We describe a system that simplifies the process of debugging programs produced by computer-aided parallelization tools. The system uses relative debugging techniques to compare serial and parallel executions in order to show where the computations begin to differ. If the original serial code is correct, errors due to parallelization will be isolated by the comparison. One of the primary goals of the system is to minimize the effort required of the user. To that end, the debugging system uses information produced by the parallelization tool to drive the comparison process. In particular the debugging system relies on the parallelization tool to provide information about where variables may have been modified and how arrays are distributed across multiple processes. User effort is also reduced through the use of dynamic instrumentation. This allows us to modify the program execution without changing the way the user builds the executable. The use of dynamic instrumentation also permits us to compare the executions in a fine-grained fashion and only involve the debugger when a difference has been detected. This reduces the overhead of executing instrumentation.

Jost, Gabriele↗

Etching in Chlorine Discharges Using an Integrated Feature Evolution-Plasma Model

Etching of semiconductor materials is reliant on plasma properties. Quantities such as ion and neutral fluxes, both in magnitude and in direction, are often determined by reactor geometry (height, radius, position of the coils, etc.) In order to obtain accurate etching profiles, one must also model the plasma as a whole to obtain local fluxes and distributions. We have developed a set of three models that simulates C12 plasmas for etching of silicon, ion and neutral trajectories in the plasma, and feature profile evolution. We have found that the location of the peak in the ion densities in the reactor plays a major role in determining etching uniformity across the wafer. For a stove top coil inductively coupled plasma (ICP), the ion density is peaked at the top of the reactor. This leads to nearly uniform neutral and ion fluxes across the wafer. A side coil configuration causes the ion density to peak near the sidewalls. Ion fluxes are thus greater toward the wall's and decrease toward the center. In addition, the ions bombard the wafer at a slight angle. This angle is sufficient to cause slanted profiles, which is highly undesirable.

Hwang, Helen H.↗

A Debugger for Computational Grid Applications

This viewgraph presentation gives an overview of a debugger for computational grid applications. Details are given on NAS parallel tools groups (including parallelization support tools, evaluation of various parallelization strategies, and distributed and aggregated computing), debugger dependencies, scalability, initial implementation, the process grid, and information on Globus.

Hood, Robert↗

Investigation of Nitride Morphology After Self-Aligned Contact Etch

Self-Aligned Contact (SAC) etch has emerged as a key enabling technology for the fabrication of very large-scale memory devices. However, this is also a very challenging technology to implement from an etch viewpoint. The issues that arise range from poor oxide etch selectivity to nitride to problems with post etch nitride surface morphology. Unfortunately, the mechanisms that drive nitride loss and surface behavior remain poorly understood. Using a simple langmuir site balance model, SAC nitride etch simulations have been performed and compared to actual etched results. This approach permits the study of various etch mechanisms that may play a role in determining nitride loss and surface morphology. Particle trajectories and fluxes are computed using Monte-Carlo techniques and initial data obtained from double Langmuir probe measurements. Etched surface advancement is implemented using a shock tracking algorithm. Sticking coefficients and etch yields are adjusted to obtain the best agreement between actual etched results and simulated profiles.

Hwang, Helen H.↗

Impact of Gas Heating in Inductively Coupled Plasmas

Recently it has been recognized that the neutral gas in inductively coupled plasma reactors heats up significantly during processing. The resulting gas density variations across the reactor affect reaction rates, radical densities, plasma characteristics, and uniformity within the reactor. A self-consistent model that couples the plasma generation and transport to the gas flow and heating has been developed and used to study CF4 discharges. A Langmuir probe has been used to measure radial profiles of electron density and temperature. The model predictions agree well with the experimental results. As a result of these comparisons along with the poorer performance of the model without the gas-plasma coupling, the importance of gas heating in plasma processing has been verified.

Hash, D. B.↗

Endo-Fullerene and Doped Diamond Nanocrystallite Based Models of Qubits for Solid-State Quantum Computers

Models of encapsulated 1/2 nuclear spin H-1 and P-31 atoms in fullerene and diamond nanocrystallite, respectively, are proposed and examined with ab-initio local density functional method for possible applications as single quantum bits (qubits) in solid-state quantum computers. A H-1 atom encapsulated in a fully deuterated fullerene, C(sub 20)D(sub 20), forms the first model system and ab-initio calculation shows that H-1 atom is stable in atomic state at the center of the fullerene with a barrier of about 1 eV to escape. A P-31 atom positioned at the center of a diamond nanocrystallite is the second model system, and 3 1P atom is found to be stable at the substitutional site relative to interstitial sites by 15 eV, Vacancy formation energy is 6 eV in diamond so that substitutional P-31 atom will be stable against diffusion during the formation mechanisms within the nanocrystallite. The coupling between the nuclear spin and weakly bound (valance) donor electron coupling in both systems is found to be suitable for single qubit applications, where as the spatial distributions of (valance) donor electron wave functions are found to be preferentially spread along certain lattice directions facilitating two or more qubit applications. The feasibility of the fabrication pathways for both model solid-state qubit systems within practical quantum computers is discussed with in the context of our proposed solid-state qubits.

Park, Seongjun↗

Support for Debugging Automatically Parallelized Programs

This viewgraph presentation provides information on the technical aspects of debugging computer code that has been automatically converted for use in a parallel computing system. Shared memory parallelization and distributed memory parallelization entail separate and distinct challenges for a debugging program. A prototype system has been developed which integrates various tools for the debugging of automatically parallelized programs including the CAPTools Database which provides variable definition information across subroutines as well as array distribution information.

Hood, Robert↗

Which nanowire couples better electrically to a metal contact: Armchair or zigzag nanotube?

The fundamental question of how chirality affects tile electronic coupling of a nanotube to metal contacts is important for tile application of nanotubes as nanowires. We show that metallic-zigzag nanotubes are superior to armchair nanotubes as nanowires, by modeling the metal-nanotube interface. More specifically, we show that as a function of coupling strength, the total electron transmission of armchair nanotubes increases and tends to be pinned close to unity for a metal with Fermi wave vector close to that of gold. In contrast, the transmission probability of zigzag nanotubes increases to the maximum possible value of two. The origin of these effects lies in the details of the wave function, which is explained.

Anantram, M. P.↗

Using Minimum-Surface Bodies for Iteration Space Partitioning

A number of known techniques for improving cache performance in scientific computations involve the reordering of the iteration space. Some of these reorderings can be considered as coverings of the iteration space with the sets having good surface-to-volume ratio. Use of such sets reduces the number of cache misses in computations of local operators having the iteration space as a domain. We study coverings of iteration spaces represented by structured and unstructured grids. For structured grids we introduce a covering based on successive minima tiles of the interference lattice of the grid. We show that the covering has good surface-to-volume ratio and present a computer experiment showing actual reduction of the cache misses achieved by using these tiles. For unstructured grids no cache efficient covering can be guaranteed. We present a triangulation of a 3-dimensional cube such that any local operator on the corresponding grid has significantly larger number of cache misses than a similar operator on a structured grid.

Frumlin, Michael↗

Parallel Programming Strategies for Irregular Adaptive Applications

Achieving scalable performance for dynamic irregular applications is eminently challenging. Traditional message-passing approaches have been making steady progress towards this goal; however, they suffer from complex implementation requirements. The use of a global address space greatly simplifies the programming task, but can degrade the performance for such computations. In this work, we examine two typical irregular adaptive applications, Dynamic Remeshing and N-Body, under competing programming methodologies and across various parallel architectures. The Dynamic Remeshing application simulates flow over an airfoil, and refines localized regions of the underlying unstructured mesh. The N-Body experiment models two neighboring Plummer galaxies that are about to undergo a merger. Both problems demonstrate dramatic changes in processor workloads and interprocessor communication with time; thus, dynamic load balancing is a required component.

Biswas, Rupak↗