Engineering topics

Biegel, Bryan A.

Publications and source records attributed to Biegel, Bryan A..

54 records · Page 3

NASA NTRS2002

Turbomachinery Airfoil Design Optimization Using Differential Evolution

An aerodynamic design optimization procedure that is based on a evolutionary algorithm known at Differential Evolution is described. Differential Evolution is a simple, fast, and robust evolutionary strategy that has been proven effective in determining the global optimum for several difficult optimization problems, including highly nonlinear systems with discontinuities and multiple local optima. The method is combined with a Navier-Stokes solver that evaluates the various intermediate designs and provides inputs to the optimization procedure. An efficient constraint handling mechanism is also incorporated. Results are presented for the inverse design of a turbine airfoil from a modern jet engine. The capability of the method to search large design spaces and obtain the optimal airfoils in an automatic fashion is demonstrated. Substantial reductions in the overall computing time requirements are achieved by using the algorithm in conjunction with neural networks.

Madavan, Nateri K.↗

NASA NTRS2002

Resource Selection Using Execution and Queue Wait Time Predictions

Computational grids provide users with many possible places to execute their applications. We wish to help users select where to run their applications by providing predictions of the execution times of applications on space shared parallel computers and predictions of when scheduling systems for such parallel computers will start applications. Our predictions are based on instance based learning techniques and simulations of scheduling algorithms. We find that our execution time prediction techniques have an average error of 37 percent of the execution times for trace data recorded from SGI Origins at NASA Ames Research Center and that this error is 67 percent lower than the error of user estimates. We also find that the error when predicting how long applications will wait in scheduling queues is 95 percent of mean queue wait times when using our execution time predictions and this is 57 percent lower than if we use user execution time estimates.

Smith, Warren↗

NASA NTRS2002

Systematic Underutilization of Glutamine In Thermophile Proteins

Rapid racemization above 100 C of L-amino acids to Domino acids, as well as deamidation, is probably a hazard for high temperature life. For example, the half-life of some asparaginyl peptides can be as short as 10 minutes at 100 C. High temperature organisms could protect themselves by reducing usage of amino acids that are easily racemized/deamidazed, by having a rapid rate of protein turnover which requires energy, or by adapting special cis-peptide conformations. We have searched eight completely sequenced thermophile genomes, and compare them to mesophile genomes, in order to identify underutilized amino acids. To our surprise, asparagine, the most unstable amino acid to deamidation, is used at about the same level in thermophile proteins in comparison to mesophiles whereas it is the second most unstable amino acid, glutamine, that is underutilized in all of eight thermophile species. Glutamines are present at 2% level in a typical thermophile protein, instead of 4% in mesophile. We argue that it is easier to protect asparagines from deamidation by cis-peptide conformations. We discuss statistical as well as structural evidence in support of our conclusions.

Liang, Shoudan↗

NASA NTRS2002

Computational Nanotechnology of Molecular Materials, Electronics and Machines

This viewgraph presentation covers carbon nanotubes, their characteristics, and their potential future applications. The presentation include predictions on the development of nanostructures and their applications, the thermal characteristics of carbon nanotubes, mechano-chemical effects upon carbon nanotubes, molecular electronics, and models for possible future nanostructure devices. The presentation also proposes a neural model for signal processing.

Srivastava, D.↗

NASA NTRS2002

The Efficiency and the Scalability of an Explicit Operator on an IBM POWER4 System

We present an evaluation of the efficiency and the scalability of an explicit CFD operator on an IBM POWER4 system. The POWER4 architecture exhibits a common trend in HPC architectures: boosting CPU processing power by increasing the number of functional units, while hiding the latency of memory access by increasing the depth of the memory hierarchy. The overall machine performance depends on the ability of the caches-buses-fabric-memory to feed the functional units with the data to be processed. In this study we evaluate the efficiency and scalability of one explicit CFD operator on an IBM POWER4. This operator performs computations at the points of a Cartesian grid and involves a few dozen floating point numbers and on the order of 100 floating point operations per grid point. The computations in all grid points are independent. Specifically, we estimate the efficiency of the RHS operator (SP of NPB) on a single processor as the observed/peak performance ratio. Then we estimate the scalability of the operator on a single chip (2 CPUs), a single MCM (8 CPUs), 16 CPUs, and the whole machine (32 CPUs). Then we perform the same measurements for a chache-optimized version of the RHS operator. For our measurements we use the HPM (Hardware Performance Monitor) counters available on the POWER4. These counters allow us to analyze the obtained performance results.

Frumkin, Michael↗

NASA NTRS2002

Effects of Lateral Plasma Density and Temperature Diffusion on VCSEL Performance

The hydrodynamic model is further verified by applying to a gain-guided single mode VCSEL. DC effects of D(sub NN): (1) increase threshold current J(sub th) and decrease slope efficiency; (2) within the studied range (50% pumping within threshold and realistic diffusion coefficient for a single mode), the L-I relation scales with the relative Injection current (J/J(sub th) - 1). AC effects of D(sub NN): (1) decrease spectral bandwidth and responsivity of direct-current modulation; (2) within the studied range, the frequency response follows the same formal dependence as predicted without diffusion and under a linear gain model, while the resonant frequency position similarly scales with the relative injection current; (3) therefore, it is concluded that the AC effects of D(sub NN) is purely of static nature and reflected via its influence on ot and J(sub th). Within this study, the nonlinear effects of D(sub NN) are mostly reproducible with an equivalent constant diffusion coefficient.

Li, Jian-Zhong↗

NASA NTRS2001

A Hydrodynamic Theory for Spatially Inhomogeneous Semiconductor Lasers: Numerical Results - 2

We present numerical results of the diffusion coefficients (DCs) in the coupled diffusion model derived in the preceding paper for a semiconductor quantum well. These include self and mutual DCs in the general two-component case, as well as density- and temperature-related DCs under the single-component approximation. The results are analyzed from the viewpoint of free Fermi gas theory with many-body effects incorporated. We discuss in detail the dependence of these DCs on densities and temperatures in order to identify different roles played by the free carrier contributions including carrier statistics and carrier-LO phonon scattering, and many-body corrections including bandgap renormalization and electron-hole (e-h) scattering. In the general two-component case, it is found that the self- and mutual- diffusion coefficients are determined mainly by the free carrier contributions, but with significant many-body corrections near the critical density. Carrier-LO phonon scattering is dominant at low density, but e-h scattering becomes important in determining their density dependence above the critical electron density. In the single-component case, it is found that many-body effects suppress the density coefficients but enhance the temperature coefficients. The modification is of the order of 10% and reaches a maximum of over 20% for the density coefficients. Overall, temperature elevation enhances the diffusive capability or DCs of carriers linearly, and such an enhancement grows with density. Finally, the complete dataset of various DCs as functions of carrier densities and temperatures provides necessary ingredients for future applications of the model to various spatially inhomogeneous optoelectronic devices.

Li, Jianzhong↗

NASA NTRS2001

A Hydrodynamic Theory for Spatially Inhomogeneous Semiconductor Lasers: Microscopic Approach

Starting from the microscopic semiconductor Bloch equations (SBEs) including the Boltzmann transport terms in the distribution function equations for electrons and holes, we derived a closed set of diffusion equations for carrier densities and temperatures with self-consistent coupling to Maxwell's equation and to an effective optical polarization equation. The coherent many-body effects are included within the screened Hartree-Fock approximation, while scatterings are treated within the second Born approximation including both the in- and out-scatterings. Microscopic expressions for electron-hole (e-h) and carrier-LO (c-LO) phonon scatterings are directly used to derive the momentum and energy relaxation rates. These rates expressed as functions of temperatures and densities lead to microscopic expressions for self- and mutual-diffusion coefficients in the coupled density-temperature diffusion equations. Approximations for reducing the general two-component description of the electron-hole plasma (EHP) to a single-component one are discussed. In particular, we show that a special single-component reduction is possible when e-h scattering dominates over c-LO phonon scattering. The ambipolar diffusion approximation is also discussed and we show that the ambipolar diffusion coefficients are independent of e-h scattering, even though the diffusion coefficients of individual components depend sensitively on the e-h scattering rates. Our discussions lead to new perspectives into the roles played in the single-component reduction by the electron-hole correlation in momentum space induced by scatterings and the electron-hole correlation in real space via internal static electrical field. Finally, the theory is completed by coupling the diffusion equations to the lattice temperature equation and to the effective optical polarization which in turn couples to the laser field.

Li, Jianzhong↗

NASA NTRS2001

Towards 100,000 CPU Cycle-Scavenging by Genetic Algorithms

We examine a web-centric design using standard tools such as web servers, web browsers, PHP, and mySQL. We also consider the applicability of Information Power Grid tools such as the Globus (no relation to the author) Toolkit. We intend to implement this architecture with JavaGenes running on at least two cycle-scavengers: Condor and United Devices. JavaGenes, a genetic algorithm code written in Java, will be used to evolve multi-species reactive molecular force field parameters.

Globus, Al↗

NASA NTRS2000

Analysis of Aluminum-Nitride SOI for High-Temperature Electronics

We use numerical simulation to investigate the high-temperature (up to 500K) operation of SOI MOSFETs with Aluminum-Nitride (AIN) buried insulators, rather than the conventional silicon-dioxide (SiO2). Because the thermal conductivity of AIN is about 100 times that of SiO2, AIN SOI should greatly reduce the often severe self-heating problem of conventional SOI, making SOI potentially suitable for high-temperature applications. A detailed electrothermal transport model is used in the simulations, and solved with a PDE solver called PROPHET In this work, we compare the performance of AIN-based SOI with that of SiO2-based SOI and conventional MOSFETs. We find that AIN SOI does indeed remove the self-heating penalty of SOL However, several device design trade-offs remain, which our simulations highlight.

Biegel, Bryan A.↗

NASA NTRS2000

Efficient Multi-Dimensional Simulation of Quantum Confinement Effects in Advanced MOS Devices

We investigate the density-gradient (DG) transport model for efficient multi-dimensional simulation of quantum confinement effects in advanced MOS devices. The formulation of the DG model is described as a quantum correction to the classical drift-diffusion model. Quantum confinement effects are shown to be significant in sub-100nm MOSFETs. In thin-oxide MOS capacitors, quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion or quantum effects in simulations dramatically improves the match between C-V simulations and measurements for oxide thickness down to 2 nm. Significant quantum corrections also occur in the I-V characteristics of short-channel (30 to 100 nm) n-MOSFETs, with current drive reduced by up to 70%. This effect is shown to result from reduced inversion charge due to quantum confinement of electrons in the channel. Also, subthreshold slope is degraded by 15 to 20 mV/decade with the inclusion of quantum effects via the density-gradient model, and short channel effects (in particular, drain-induced barrier lowering) are noticeably increased.

Biegel, Bryan A.↗

NASA NTRS2000

Are Fibre Channel SANs a Commodity?

The goal of this work is to evaluate the feasibility of putting together a Fibre Channel Storage Area Network with heterogeneous hardware running both open-source and commercial operating systems. Adherence to the Fibre Channel Specification is supposed to guarantee interoperability in such an environment. We also want to evaluate how difficult it might be to put together a SAN using open-source components. While all the commercial vendors provide Fibre Channel support, this comes at a cost, e.g., not only O/S and drivers, but usually an expensive support contract. The open-source model could lower the cost of building and maintaining a SAN. Of course, for this to be the case, the open-source platforms would have to provide the functionality to construct a SAN. We are assembling a Fibre Channel SAN from heterogeneous hardware (i386, alpha, sparc) running *BSD, Linux, Tru64, NT and Solaris operating systems. We are running several tests to investigate the level of Fibre Channel support provided by each OS. Our current testbed is specified in the table below. Currently, it only contains open-source platforms. We plan to add a PC running OpenBSD, as well as the following commercial systems: Sun Ultra 1/Solaris, DEC AlphaServer 4000/Tru64 Unix, Pentium Pro PC/Windows NT.

Becker, Jeff↗

NASA NTRS2000

Efficient Multi-Dimensional Simulation of Quantum Confinement Effects in Advanced MOS Devices

We investigate the density-gradient (DG) transport model for efficient multi-dimensional simulation of quantum confinement effects in advanced MOS devices. The formulation of the DG model is described as a quantum correction ot the classical drift-diffusion model. Quantum confinement effects are shown to be significant in sub-100nm MOSFETs. In thin-oxide MOS capacitors, quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion of quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion of quantum effects in simulations dramatically improves the match between C-V simulations and measurements for oxide thickness down to 2 nm. Significant quantum corrections also occur in the I-V characteristics of short-channel (30 to 100 nm) n-MOSFETs, with current drive reduced by up to 70%. This effect is shown to result from reduced inversion charge due to quantum confinement of electrons in the channel. Also, subthreshold slope is degraded by 15 to 20 mV/decade with the inclusion of quantum effects via the density-gradient model, and short channel effects (in particular, drain-induced barrier lowering) are noticeably increased.

Biegel, Bryan A.↗

NASA NTRS1999

The Future of Electronic Device Design: Device and Process Simulation Find Intelligence on the World Wide Web

We are on the path to meet the major challenges ahead for TCAD (technology computer aided design). The emerging computational grid will ultimately solve the challenge of limited computational power. The Modular TCAD Framework will solve the TCAD software challenge once TCAD software developers realize that there is no other way to meet industry's needs. The modular TCAD framework (MTF) also provides the ideal platform for solving the TCAD model challenge by rapid implementation of models in a partial differential solver.

Biegel, Bryan A.↗

NASA NTRS1999

Multi-Dimensional Quantum Tunneling and Transport Using the Density-Gradient Model

We show that quantum effects are likely to significantly degrade the performance of MOSFETs (metal oxide semiconductor field effect transistor) as these devices are scaled below 100 nm channel length and 2 nm oxide thickness over the next decade. A general and computationally efficient electronic device model including quantum effects would allow us to monitor and mitigate these effects. Full quantum models are too expensive in multi-dimensions. Using a general but efficient PDE solver called PROPHET, we implemented the density-gradient (DG) quantum correction to the industry-dominant classical drift-diffusion (DD) model. The DG model efficiently includes quantum carrier profile smoothing and tunneling in multi-dimensions and for any electronic device structure. We show that the DG model reduces DD model error from as much as 50% down to a few percent in comparison to thin oxide MOS capacitance measurements. We also show the first DG simulations of gate oxide tunneling and transverse current flow in ultra-scaled MOSFETs. The advantages of rapid model implementation using the PDE solver approach will be demonstrated, as well as the applicability of the DG model to any electronic device structure.

Biegel, Bryan A.↗

NASA NTRS1998

Multi-Dimensional Quantum Effect Simulation Using a Density-Gradient Model and Script-Level Programming Techniques

A density-gradient (DG) model is used to calculate quantum-mechanical corrections to classical carrier transport in MOS (Metal Oxide Semiconductor) inversion/accumulation layers. The model is compared to measured data and to a fully self-consistent coupled Schrodinger and Poisson equation (SCSP) solver. Good agreement is demonstrated for MOS capacitors with gate oxide as thin as 21 A. It is then applied to study carrier distribution in ultra short MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) with surface roughness. This work represents the first implementation of the DG formulation on multidimensional unstructured meshes. It was enabled by a powerful scripting approach which provides an easy-to-use and flexible framework for solving the fourth-order PDEs (Partial Differential Equation) of the DG model.

Rafferty, Connor S.↗

NASA NTRS1998

Simulation of Ultra-Small MOSFETs Using a 2-D Quantum-Corrected Drift-Diffusion Model

We describe an electronic transport model and an implementation approach that respond to the challenges of device modeling for gigascale integration. We use the density-gradient (DG) transport model, which adds tunneling and quantum smoothing of carrier density profiles to the drift-diffusion model. We present the current implementation of the DG model in PROPHET, a partial differential equation solver developed by Lucent Technologies. This implementation approach permits rapid development and enhancement of models, as well as run-time modifications and model switching. We show that even in typical bulk transport devices such as P-N diodes and BJTs, DG quantum effects can significantly modify the I-V characteristics. Quantum effects are shown to be even more significant in small, surface transport devices, such as sub-0.1 micron MOSFETs. In thin-oxide MOS capacitors, we find that quantum effects may reduce gate capacitance by 25% or more. The inclusion of quantum effects in simulations dramatically improves the match between C-V simulations and measurements. Significant quantum corrections also occur in the I-V characteristics of short-channel MOSFETs due to the gate capacitance correction.

Biegel, Bryan A.↗

NASA NTRS1997

Simulation of Ultra-Small Electronic Devices: The Classical-Quantum Transition Region

Concern is increasing about how quantum effects will impact electronic device operation as down-scaling continues along the SIA Roadmap through 2010. This document describes part of a new semiconductor device modeling (SDM) program at NAS to investigate these concerns by utilizing advanced NAS and third-party numerical computation software to rapidly implement and investigate electronic device models including quantum effects. This SDM project will investigate quantum effects in devices in the classical-quantum transition region, especially sub-0.1 mm MOSFETs. Specific tasks planned for this project include the use of quantum corrections to the classical drift-diffusion and hydrodynamic models of electron transport, arid the use of nominally quantum models including significant scattering.

Biegel, Bryan A.↗