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Bhusal, Lekhnath

Publications and source records attributed to Bhusal, Lekhnath.

Ferroelastic modulation and the Bloch formalism

The key to the development of advanced materials is to understand their electronic structure-property relationship. Utilization of this understanding to design new electronic materials with desired properties led to modern epitaxial growth approaches for synthesizing artificial lattices, which for almost half a century have become the mainstay of electronic and photonic technologies. In contrast to previous scalar modulation approaches, we now study synthetic crystal lattices that have a tensor artificial modulation and develop a theory for photons and conduction band states in these lattices in a regime with an unusual departure from the familiar consequences of translational symmetry and Bloch's theorem. As a result, this study reveals that a nonmagnetic crystal lattice modulated by a purely geometrical orientational superlattice potential can lead to localized states or to spiral states for electrons and photons, as well as weakly or strongly localized states that could be used to markedly slow down the propagation of light and for optical energy storage applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Lattice-mismatched GaInP LED devices and methods of fabricating same

A method (100) of fabricating an LED or the active regions of an LED and an LED (200). The method includes growing, depositing or otherwise providing a bottom cladding layer (208) of a selected semiconductor alloy with an adjusted bandgap provided by intentionally disordering the structure of the cladding layer (208). A first active layer (202) may be grown above the bottom cladding layer (208) wherein the first active layer (202) is fabricated of the same semiconductor alloy, with however, a partially ordered structure. The first active layer (202) will also be fabricated to include a selected n or p type doping. The method further includes growing a second active layer (204) above the first active layer (202) where the second active layer (204) Is fabricated from the same semiconductor alloy.

42 ENGINEERING↗