Engineering topics

Bhattacharya, P. K.

Publications and source records attributed to Bhattacharya, P. K..

20 records · Page 2

NASA NTRS1986

Field-dependent linewidths and photoluminescence energies in GaAs-AlGaAs multiquantum well modulators

Photoluminescence linewidths and transition energies have been measured in GaAs-AlGaAs multiple quantum wells with large (equal to or greater than 160 A) barrier widths as a function of applied transverse electric field. The experimental data agree well with values calculated by using a recently developed variational technique. It is apparent that heterointerface roughness is the dominant line broadening mechanism. The emission intensity decreases rapidly with field, principally due to carrier tunneling at high fields. At 80 kV/cm a shift of 20 meV in the emission energy is observed.

Juang, F.-Y.↗

NASA NTRS1985

Electron and hole impact ionization coefficients in GaAs-Al(x)Ga(1-x)As superlattices

Electron and hole multiplication and impact ionization coefficients have been measured with pure carrier injection in p(+)-n(-)-n(+) diodes grown by molecular beam epitaxy. Values of the electron and hole ionization coefficient ratio alpha/beta = 2-5 are measured for superlattices with well width Lz greater than or equal to 100 A and alpha/beta greater than 10 is measured in a graded band-gap superlattice with a total well and barrier width LB + LZ = 120 A. The ratio decreases and becomes less than unity for smaller well sizes. This is caused by an increase in beta (E) while alpha (E) remains fairly constant. The results have been interpreted by considering varying hole confinement and scattering in the coupled quantum wells.

Juang, F.-Y.↗