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Bell, L. D.

Publications and source records attributed to Bell, L. D..

At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1996

Direct Observation of Momentum Conservation at the Au/Si Interface Using BEEM (abstract)

The verification of parallel momentum conservation at a metal/semiconductor interface is a fundamental issue in interface transport. Ballistic-electron-microscopy (BEEM) is a recently developed method for probing interfaces with nanometer resolution. In this talk, BEEM spectroscopy on Au/Si(111) structures as a function of Au thickness and temperature will be described.

metal/semiconductor interface ballistic-electron-e↗
NASA NTRS1996

Alpha-Particle Gas-Pressure Sensor

An approximate model was developed to establish design curves for the saturation region and a more complete model developed to characterize the current-voltage curves for an alpha-particle pressure sensor. A simple two-parameter current-voltage expression was developed to describe the dependence of the ion current on pressure. The parameters are the saturation-current pressure coefficient and mu/D, the ion mobility/diffusion coefficient. The sensor is useful in the pressure range between 0.1 and 1000 mb using a 1 - mu Ci(241) Am source. Experimental results, taken between 1 and up to 200 mb, show the sensor operates with an anode voltage of 5 V and a sensitivity of 20 fA/mb in nitrogen.

Buehler, M. C.↗
NASA NTRS1996

Alpha-Particle Gas-Pressure Sensor

An approximate model was developed to establish design curves for the saturation region and a more complete model developed to characterize the current-voltage curves for an alpha-particle pressure sensor.

alpha-particle↗
NASA NTRS1995

Alpha-particle Gas Pressure Gauge

Described are preliminary results obtained on a novel gas pressure gauge that operates between 0.1 and 1000 mb. This gauge uses a 1- micron Ci alpha particle source to ionize the gas in a small chamber with an electric field imposed between anode and cathode electrodes that drives positive ions to the cathode where they are collected electronically. This gauge could make Martian pressure measurements.

gas pressure sensor micro-pressure gauge alpha-par↗
NASA NTRS1995

Measurements of Local Strain Variation in Si(1-x)Ge(x)/Si Heterostructures

The energy splitting of the conduction-band minimum of Si(1-x), Ge(x), due to strain has been directly measured by the application of ballistic-electron-emission microscope (BEEM) spectroscopy to Ag/Si(1-x), Ge(x) structures. Experimental values for this conduction-band splitting agree well with calculations. For Au/Si(1-x), Ge(x), however, heterogeneity in the strain of the Si(1-x), Ge(x) layer is introduced by deposition of the Au. This variation is attributed to species interdiffusion, which produces a rough Si(1-x)Ge(x) surface. Preliminary modeling indicates that the observed roughness is consistent with the strain variation measured by BEEM.

Bell, L. D.↗
NASA NTRS1995

Gas Pressure Gauge Based on Alpha-Particle Induced Ion Currents

The use of ionization currents for measuring pressure was first demonstrated in the late 1940's. The early gauges operated at high voltages and used rather large ion sources. The ionization gauge is actually a densitometer that is sensitive to the temperature and pressure of the gas in the chamber. This report describes the use of low voltages and small ion sources in the development of a prototype.

transducers gas pressure gauge alpha particles ion↗
NASA NTRS1994

Ballistic-Electron-Emission-Microscopy of Strained Si(sub 1-x)Ge(sub x) Layers

Ballistic-electron-emission microscopy (BEEM) has been used to investigate the effects of strain on Si(sub 1-x)Ge(sub x) alloys. Lifting of the degeneracy of the conduction-band minimum of Si(sub 1-x)Ge(sub x), due to lattice deformation has been directly measured by application of BEEM spectroscopy to Ag/Si structures. Experimental values for this conduction-band splitting agree well with calculations. In addition, an unexpected heterogeneity in the strain of the Si(sub 1-x)Ge(sub x) layer is introduced by deposition of Au. This effect, not observed with Ag, is attributed to species interdiffusion and has important implications for metal-semiconductor devices based oil pseudomorphic Si(sub 1-x)Ge(sub x)/Si material systems.

Bell, L. D.↗
NASA NTRS1994

Ballistic-Electron-Emission Microscopy of Strained Si l-x Ge x Layers

Ballistic-electron-emission microscopy has been used to investigate the effects of strain on Si l-x Ge x alloys. Lifting of the degeneracy of the conduction-band minimum of SiGe due to lattice deformation has been directly measured by application of BEEM spectroscopy to Ag/Si structures.

lattice↗
NASA NTRS1993

Beem Spectroscopy of Electron Transport Through A1As/GaAs Heterostructures

BEEM spectroscopy has been used to characterize hot carrier transport through A1As/GaAsheterostructures. The dependence of electron transmission on A1As thickness has been directlymeasured, and the position of the A1As L_1 minima, which has been subject to some uncertainty inthe past, has been determined. First-principles transmission calculations, based on a tight-bindingformalism, are compared to the results of BEEM spectroscopy.

Kaiser, W. J.↗
NASA NTRS1993

Ballistic Electron Emission Microscopy of Metal/Group IV Interfaces

Ballistic electron emission microscopy and spectroscopy, together with related techniques, have been applied with great success to the study of buried interfaces. These probes, known collectively as BEEM, have yielded important information on interface transport, interface band structure, and carrier scattering, with lateral spatial resolution on the nanometer scale. Recent applications of the technique to polycrystalline metal/semiconductor interfaces have demonstrated an ability to spatially map both conduction band and valence band semiconductor structure. BEEM studies of epitaxial silicide/silicon interfaces have been particularly fruitful, as the rich silicide band structure results in complex and often surprising transport behavior...

Hecht, M. H.↗
NASA NTRS1993

Ballistic-Electron-Emission Microscopy Techniques for Nanometer-scale Characterization of Interfaces

Semiconductor interface properties are among the most important phenomena in materials science and technology. The study of metal/semiconductor Schottky barrier interfaces has been the primary focus of a large research and development community for decades. Throughout the long history of interface investigation, the study of interface defect electronic properties have been seriously hindered by the fundamental experimental difficulty of probing subsurface structures. A new method, Ballistic-Electron-Emission Microscopy (BEEM), has been developed which not only enables spectroscopic probing of subsurface interface properties, but also, provides nanometer-resolution imaging capabilities. BEEM employs Scanning Tunneling Microscopy (STM) and a unique spatially localized ballistic electron spectroscopy method...

Bell, L. D.↗