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Bell, Christopher

Publications and source records attributed to Bell, Christopher.

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Charge-lattice coupling and the dynamic structure of the U–O distribution in UO 2+x

The different structures and behaviors of UO 2+x observed in crystallographic and local structure measurements were examined by extended X-ray absorption fine structure (EXAFS) measurements of pristine UO 2.0 , p + and He 2+ irradiated UO 2.0 , and, at multiple temperatures, bulk U 4 O 9 and U 3 O 7 and thin film U 4 O 9-δ on an epitaxial substrate. The disorder caused by irradiation is mostly limited to increased widths of the existing U–O/U pair distributions, with any new neighbor shells being minor. As has been previously reported, the disorder caused by oxidative addition to U 4 O 9 and U 3 O 7 is much more extensive, resulting in multisite U–O distributions and greater reduction of the U–U amplitude with different distributions in bulk and thin-film U 4 O 9 . This includes the significant spectral feature near R = 1.2 Å for all U 4 O 9 and U 3 O 7 samples fit with a U-oxo type moiety with a U–O distance around 1.7 Å. In addition to indicating that these anomalies only occur in mixed valence materials, this work confirms the continuous rearrangement of the U–O distributions from 10 to 250 K. Although these variations of the structure are not observed in crystallography, their prominence in the EXAFS indicates that the dynamic structure underlying these effects is an essential factor of these materials.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2021

Universal Bound to the Amplitude of the Vortex Nernst Signal in Superconductors

A liquid of superconducting vortices generates a transverse thermoelectric response. This Nernst signal has a tail deep in the normal state due to superconducting fluctuations. Here, we present a study of the Nernst effect in two-dimensional heterostructures of Nb-doped strontium titanate (STO) and in amorphous MoGe. Additionally, the Nernst signal generated by ephemeral Cooper pairs above the critical temperature has the magnitude expected by theory in STO. On the other hand, the peak amplitude of the vortex Nernst signal below Tc is comparable in both and in numerous other superconductors despite the large distribution of the critical temperature and the critical magnetic fields. In four superconductors belonging to different families, the maximum Nernst signal corresponds to an entropy per vortex per layer of ≈kBln 2 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Observation of signatures of subresolution defects in two-dimensional superconductors with a scanning SQUID

The diamagnetic susceptibility of a superconductor is directly related to its superfluid density. Mutual inductance is a highly sensitive method for characterizing thin films, however, in traditional mutual inductance measurements, the measured response is a nontrivial average over the area of the mutual inductance coils, which are typically of millimeter size. Here we measure localized, isolated features in the diamagnetic susceptibility of Nb superconducting thin films with lithographically defined through holes, δ-doped SrTiO 3 , and the two-dimensional electron system at the interface between LaAlO 3 and SrTiO 3 , using scanning superconducting quantum interference device susceptometry, with spatial resolution as fine as 0.7 μm. We show that these features can be modeled as locally suppressed superfluid density, with a single parameter that characterizes the strength of each feature. In conclusion, this method provides a systematic means of finding and quantifying submicron defects in two-dimensional superconductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Atomically engineered epitaxial anatase TiO 2 metal-semiconductor field-effect transistors

Here, anatase TiO 2 is a promising material for a vast array of electronic, energy, and environmental applications, including photocatalysis, photovoltaics, and sensors. A key requirement for these applications is the ability to modulate its electrical properties without dominant dopant scattering and while maintaining high carrier mobility. Here, we demonstrate the room temperature field-effect modulation of the conducting epitaxial interface between anatase TiO 2 and LaAlO 3 (001), which arises for LaO-terminated LaAlO 3 , while the AlO 2- terminated interface is insulating. This approach, together with the metal-semiconductor field-effect transistor geometry, naturally bypasses the gate/channel interface traps, resulting in a high field-effect mobility μ FE of 3.14 cm 2 (V s) –1 approaching 98% of the corresponding Hall mobility μ Hall . Accordingly, the channel conductivity is modulated over 6 orders of magnitude over a gate voltage range of ~4 V.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Strain Tuning in Complex Oxide Epitaxial Films Using an Ultrathin Strontium Aluminate Buffer Layer

A reliable method to apply biaxial strain over a wide range of values with minimal dislocation generation is critical for the study of strain dependent physical properties in oxide thin films and heterostructures. In this study, we systematically controlled the strain state in a perovskite manganite thin film by as much as 1% using a new ultrathin strain-releasing buffer layer Sr 3 Al 2 O 6 , and observed signatures of accompanying magnetic and metal–insulator transitions. The near-zero strain state is achieved within five nanometers of buffer layer thickness, substantially thinner than any oxide epitaxial buffer layers that can continuously tune the film strain states. Furthermore, the majority of misfit dislocations were confined to the Sr 3 Al 2 O 6 layer, structurally decoupling defects in the film from the substrate.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Imaging and tuning polarity at SrTiO 3 domain walls

Electrostatic fields tune the ground state of interfaces between complex oxide materials. Electronic properties, such as conductivity and superconductivity, can be tuned and then used to create and control circuit elements and gate-defined devices. Here in this paper, we show that naturally occurring twin boundaries, with properties that are different from their surrounding bulk, can tune the LaAlO 3 /SrTiO 3 interface 2DEG at the nanoscale. In particular, SrTiO 3 domain boundaries have the unusual distinction of remaining highly mobile down to low temperatures, and were recently suggested to be polar. Here we apply localized pressure to an individual SrTiO 3 twin boundary and detect a change in LaAlO 3 /SrTiO 3 interface current distribution. Our data directly confirm the existence of polarity at the twin boundaries, and demonstrate that they can serve as effective tunable gates. As the location of SrTiO 3 domain walls can be controlled using external field stimuli, our findings suggest a novel approach to manipulate SrTiO 3 -based devices on the nanoscale.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Variation in superconducting transition temperature due to tetragonal domains in two-dimensionally doped SrTiO 3

Strontium titanate is a low-temperature, non-Bardeen-Cooper-Schrieffer superconductor that superconducts to carrier concentrations lower than in any other system and exhibits avoided ferroelectricity at low temperatures. Neither the mechanism of superconductivity in strontium titanate nor the importance of the structure and dielectric properties for the superconductivity are well understood. We studied the effects of twin structure on superconductivity in a 5.5-nm-thick layer of niobium-doped SrTiO3 embedded in undoped SrTiO3. We used a scanning superconducting quantum interference device susceptometer to image the local diamagnetic response of the sample as a function of temperature. We observed regions that exhibited a superconducting transition temperature T-c greater than or similar to 10% higher than the temperature at which the sample was fully superconducting. The pattern of these regions varied spatially in a manner characteristic of structural twin domains. Some regions are too wide to originate on twin boundaries; therefore, we propose that the orientation of the tetragonal unit cell with respect to the doped plane affects T-c. Our results suggest that the anisotropic dielectric properties of SrTiO3 are important for its superconductivity and need to be considered in any theory of the mechanism of the superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Dual-Gate Modulation of Carrier Density and Disorder in an Oxide Two-Dimensional Electron System

Carrier density and disorder are two crucial parameters that control the properties of correlated two-dimensional electron systems. Furthermore, in order to disentangle their individual contributions to quantum phenomena, independent tuning of these two parameters is required. By utilizing a hybrid liquid/solid electric dual-gate geometry acting on the conducting LaAlO 3 /SrTiO 3 heterointerface, we obtain an additional degree of freedom to strongly modify the electron confinement profile and thus the strength of interfacial scattering, independent from the carrier density. A dual-gate controlled nonlinear Hall effect is a direct manifestation of this profile, which can be quantitatively understood by a Poisson–Schrödinger sub-band model. In particular, the large nonlinear dielectric response of SrTiO 3 enables a very wide range of tunable density and disorder, far beyond that for conventional semiconductors. This study provides a broad framework for understanding various reported phenomena at the LaAlO 3 /SrTiO 3 interface.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Tuning band alignment using interface dipoles at the Pt/anatase TiO 2 interface

The Schottky barrier heights at the Pt/TiO 2 (001) junctions are modulated over 0.8 eV by inserting <1 nm of LaAlO 3 . The large electric field in the LaAlO 3 is stabilized by preserving the continuity of in-plane lattice symmetry at the oxide interface. Lastly, these results greatly expand the application of dipole engineering to versatile polycrystalline metal/binary oxide functional interfaces.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Using the apparent diffusion coefficient to identifying MGMT promoter methylation status early in glioblastoma: importance of analytical method

Accurate knowledge of O{sup 6}-methylguanine methyltransferase (MGMT) gene promoter subtype in patients with glioblastoma (GBM) is important for treatment. However, this test is not always available. Pre-operative diffusion MRI (dMRI) can be used to probe tumour biology using the apparent diffusion coefficient (ADC); however, its ability to act as a surrogate to predict MGMT status has shown mixed results. We investigated whether this was due to variations in the method used to analyse ADC. We undertook a retrospective study of 32 patients with GBM who had MGMT status measured. Matching pre-operative MRI data were used to calculate the ADC within contrast enhancing regions of tumour. The relationship between ADC and MGMT was examined using two published ADC methods. A strong trend between a measure of ‘minimum ADC’ and methylation status was seen. An elevated minimum ADC was more likely in the methylated compared to the unmethylated MGMT group (U = 56, P = 0.0561). In contrast, utilising a two-mixture model histogram approach, a significant reduction in mean measure of the ‘low ADC’ component within the histogram was associated with an MGMT promoter methylation subtype (P < 0.0246). This study shows that within the same patient cohort, the method selected to analyse ADC measures has a significant bearing on the use of that metric as a surrogate marker of MGMT status. Thus for dMRI data to be clinically useful, consistent methods of data analysis need to be established prior to establishing any relationship with genetic or epigenetic profiling.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2015

Controlling band alignments by artificial interface dipoles at perovskite heterointerfaces

The concept ‘the interface is the device' is embodied in a wide variety of interfacial electronic phenomena and associated applications in oxide materials, ranging from catalysts and clean energy systems to emerging multifunctional devices. Many device properties are defined by the band alignment, which is often influenced by interface dipoles. On the other hand, the ability to purposefully create and control interface dipoles is a relatively unexplored degree of freedom for perovskite oxides, which should be particularly effective for such ionic materials. Here we demonstrate tuning the band alignment in perovskite metal-semiconductor heterojunctions over a broad range of 1.7 eV. This is achieved by the insertion of positive or negative charges at the interface, and the resultant dipole formed by the induced screening charge. This approach can be broadly used in applications where decoupling the band alignment from the constituent work functions and electron affinities can enhance device functionality.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Enhanced electrical transparency by ultra-thin LaAlO 3 insertion at oxide metal/semiconductor heterointerfaces

We demonstrate that the electrical conductivity of metal/semiconductor oxide heterojunctions can be increased over 7 orders of magnitude by inserting an ultrathin layer of LaAlO 3 . This counterintuitive result, that an interfacial barrier can be driven transparent by inserting a wide-gap insulator, arises from the large internal electric field between the two polar LaAlO 3 surfaces. In conclusion, this field modifies the effective band offset in the device, highlighting the ability to design the electrostatic boundary conditions with atomic precision.

interface dipole↗
DOE OSTI2014

Spin-dependent transport across Co/LaAlO{sub 3}/SrTiO{sub 3} heterojunctions

The conducting interface formed between LaAlO{sub 3} and SrTiO{sub 3} exhibits high electron mobility, tunable carrier densities, and is theoretically predicted to have long spin lifetimes. Thus, the LaAlO{sub 3}/SrTiO{sub 3} heterostructure is a promising system for the transportation of spin information. We have investigated spin-dependent transport across Co/LaAlO{sub 3}/SrTiO{sub 3} heterostructures using an all electrical three terminal geometry and observed Lorentzian magnetoresistance typically associated with Hanle spin dephasing. However, such a picture fails to explain all the experimentally observed behavior. Further, experiments with spin-unpolarized Au/LaAlO{sub 3}/SrTiO{sub 3} heterojunctions support an alternative scenario involving current modulation by spin-dependent transport through defect states in the LaAlO{sub 3} barrier.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗