Bates, Cameron Russell | Engineering Papers

DOE OSTI2024

MCNPs Easy Sources for (α,n) (MESA):Verification with Sources4c

MESA is intended to be a direct re-implementation of the algorithms documented in the Sources manual in C++. However, some fundamental changes to the computational structure and logic were made to avoid the use of goto, require consistency in input definition, and reduce computational approximations in later steps of three-layer problems. In addition, MESA uses α-decay information from ISC libraries (based on ENDF). In most cases, differences between Sources4c and MESA are dominated by differences in decay energy spectra and intensities. To verify this we have reproduced 6 problems that are documented examples or samples in Sources4c. These problems cover the three types of problems MESA currently supports: homogeneous, interface, and three-layer.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

DOE OSTI2024

MCNPs Easy Sources for (α,n) (MESA) 1.0: A User’s Guide

MCNPs Easy Sources for Alpha,N (MESA) facilitates the construction of MCNP source definition cards for (α,n) sources. It is a complete re-write of the homogeneous, surface source, and three layer problem types from Sources4c. Please refer to this reference for documentation on the cross-sections and neutron emission spectra. The one departure from Sources4c is the use of alpha energies and activities from the ISC ENDF VII or VIII library specified by the user.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

DOE OSTI2024

High-purity germanium semiconductor modeling in the detector response function toolkit

In this study, we have extended the detector response function toolkit (DRiFT) to provide modeling capabilities of semiconductor sensors. DRiFT provides realistic nuclear instrumentation response by post-processing Monte-Carlo N-particle (MCNP®) radiation transport outputs. MCNP® is capable of modeling radiation transport in complex environments, but has limited detector physics and readout electronics modeling capabilities. Semiconductor detector response can be calculated with a high-fidelity for a flexible range of environments by utilizing MCNP® to simulate radiation interactions inside of detector volumes, and then using DRiFT to model charge transport and signal formation in the semiconductor, as well as the readout electronics. DRiFT models charge transport in the semiconductor, the preamplifier, shaping amplifier, pulse pile-up, and electronic noise to generate detector response. The semiconductor application in DRiFT can model a range of semiconductor materials, shapes, and sizes; and is demonstrated here for a large volume coaxial high-purity germanium (HPGe) detector. Here, we compare detector response functions of a coaxial HPGe detector with measurement of 60 Co, 133 Ba, and 137 Cs at varying count rates, and we conduct a parameter study to demonstrate the effect of changing parameters in the DRiFT simulation. The HPGe detector response function shows excellent agreement with measurements of difference sources with varying dead times and count rates.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗