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Barner, J. B.

Publications and source records attributed to Barner, J. B..

Sub-Micron Long HTS Ho Electron Mixers

The hot-electron bolometer mixer made from a high-T, superconductor (HTS) was introduced recently as an alternative to a Schottky mixer at THz frequencies. The performance of the mixer depends on the total thermal conductance for heat removal from the phonon sub-system due to either length-dependent phonon diffusion or phonon escape to the substrate. We have measured both the length and temperature dependencies of the IF bandwidth of the mixers fabricated from 25-35 mn thick YBCO films on MgO and sapphire substrates. The films were grown by a laser deposition technique and electron-beam lithography was used to define bridge lengths down to 50 nm. Mixer measurements were done using signal frequencies in the range of 1-100 GHz. For 50 nm and 400 nm long devices on MgO, the 3-dB bandwidth was about 100 MHz. At temperatures below 60 K, the hot-electron plateau was clearly seen starting around 2-3 GHz. At temperatures above 70 K, the flux-flow effects begin to dominate and the IF bandwidth increases to 1-8 GHz, while the conversion efficiency drops by several dB. This temperature dependence of the IF bandwidth can account for previously reported unexpectedly high bandwidth of HTS mixers.

Harnack, 0.↗

Processing of Superconductor-Normal-Superconductor Josephson Edge Junctions

The electrical behavior of epitaxial superconductor-normal-superconductor (SNS) Josephson edge junctions is strongly affected by processing conditions. Ex-situ processes, utilizing photoresist and polyimide/photoresist mask layers, are employed for ion milling edges for junctions with Yttrium-Barium-Copper-Oxide (YBCO) electrodes and primarily Co-doped YBCO interlayers.

photoresist polyimide process interlayer materials↗

High-T(sub c) Superconductor-Normal-Superconductor Junctions with Polyimide-Passivated Ambient Temperature Edge Formation

The ability to controllably fabricate High-Temperature Superconductor (HTS) S-Normal-S (SNS) Josephson Juntions (JJ's) enhances the possibilities fro many applications, including digital circuits, SQUID's, and mixers. A wide variety of approaches to fabricating SNS-like junctions has been tried and analyzed in terms of proximity effect behavior.

HTS SNS Josephson Junction JJ polyimide films poly↗

(abstract) All Epitaxial Edge-geometry SNS Devices with Doped PBCO and YBCO Normal Layers

We will present our results on tapered-edge-geometry SNS weak link fabricated from c-axis oriented base-, counterelectrode and normal layers using a variety of processing conditions. To date, we have employed a variety of different normal materials (Co-doped YBCO, Y-doped PBCO, Ca-doped PBCO). We have been examining the junction fabrication process in detail and we will present our methods. In particular, we have been examining both epitaxial and non-epitaxial milling mask overlayers and we will present a comparison of both methods. These devices behave similar to the expectations of the resisively shunted junction model and conventional SNS proximity effect models but with some differences which will be discussed. We will present the detailed systematics of our junctions including device parameters versus temperature, rf and dc magnetic response for the various processing conditions.

epitaxial doped PBCO YBCO junction fabrication mil↗

(abstract) Epitaxial High-T(sub c) SNS Weak Links on Silicon-on-Sapphire Substrates

High-T(sub c) SNS weak links are expected to prove useful as high frequency sources and detectors. Recent studies with low-T(sub c) Josephson mixers using shunted tunnel junctions at 100 GHz show good initial performance, and modeling suggests that these results should extrapolate to higher frequencies if larger I(sub c)R(sub n) products can be achieved. Progress on this work will be reported.

high frequency sources detectors Josephson silicon↗

(abstract) High-T(sub c) SNS Weak Links Using Oxide Normal Metals

This work examines device results for edge-geometry SNS weak links utilizing a variety of oxide normal metals. A comparison of the electrical properties of fabricated devices and the magnetic field response will be presented. Device reproducibility will also be discussed. This talk will also examine recent progress in fabrication of epitaxial SNS weak links on silicon-on-sapphire (SOS) substrates. SNS weak links fabricated recently are under investigation, and preliminary results on these devices will be discussed.

SNS weak links oxide normal metals silicon-on-sapp↗

High Temperature Superconductor Josephson Weak Links

High T_c edge-geometry SNS microbridges have been fabricated using ion-damaged YBa_2Cu_3O_(7-x) (YBCO) and a nonsuperconducting phase of YBCO (N-YBCO) as normal metals. Optimization of the ion milling process used for YBCO edge formation and cleaning has resulted in ion-damage barrier devices which exhibit I-V characteristics consistent with the Resistively-Shunted-Junction (RSJ) model, with typical current densities (J_c) of approximately 5 x 10^6 A/cm^2 at 4.2 K. Characterization of N-YBCO films suggests that N-YBCO is the orthorhombic YBCO phase with oxygen disorder suppressing T_c...

Hunt, B. D.↗

Transition Edge YBa_2Cu_3O_(7-x) Microbolometers for Infrared Staring Arrays

A potentially important application of high-temperature superconducting microbolometers is infrared staring arrays. In many such staring arrays, sensitivity is more important than speed of response. Thus, it is desirable to design low-thermal-mass pixels that are thermally isolated from the substrate. To this end, Johnson, et al. at Honeywell have fabricated meander lines of YBa_2Cu_3O_7(-x) (YBCO) sandwiched between layers of Si_3N_4 (SN). The silicon was etched out from under each YBCO meander line to form low-thermal-mass, thermally isolated microbolometers. These devices showed responsivities up to 60 kV/W with a 16 micro-A bias, and a noise equivalent power of 9x10^(-13) W/Hz^(1/2) at 7 Hz with a 5 micro-A bias (neglecting contact noise)...

Foote, M. C.↗

All-YBa2Cu3O(7-x) edge-geometry weak links

High quality YBa2Cu3O(7-x)/normal-metal/YBa2Cu3O(7-x) edge-geometry weak links are fabricated using nonsuperconducting Y-Ba-Cu-O barrier layers deposited by laser ablation at reduced growth temperatures. Devices incorporating 25-100-A-thick barrier layers exhibit current-voltage characteristics consistent with the resistively-shunted-junction model, as well as ac Josephson steps. Magnetic field modulation of the critical currents shows Fraunhofer-like behavior with a periodicity which scales with device area. The critical currents vary exponentially with barrier thickness indicating an effective normal metal coherence length of 20 A. The average resistances scale linearly with Y-Ba-Cu-O interlayer thickness and device area. The scaling behavior of the device parameters combined with the well-behaved magnetic field modulation of the critical currents demonstrates good barrier-layer uniformity with low pinhole densities. Near the transition temperature, the critical currents exhibit a temperature dependence proportional to (1 - T/Tc) squared.

Hunt, B. D.↗

Composition variations in pulsed-laser-deposited Y-Ba-Cu-O thin films as a function of deposition parameters

The composition of pulsed-ultraviolet-laser-deposited Y-Ba-Cu-O films was examined as a function of position across the substrate, laser fluence, laser spot size, substrate temperature, target conditioning, oxygen pressure and target-substrate distance. Laser fluence, laser spot size, and substrate temperature were found to have little effect on composition within the range investigated. Ablation from a fresh target surface results in films enriched in copper and barium, both of which decrease in concentration until a steady state condition is achieved. Oxygen pressure and target-substrate distance have a significant effect on film composition. In vacuum, copper and barium are slightly concentrated at the center of deposition. With the introduction of an oxygen background pressure, scattering results in copper and barium depletion in the deposition center, an effect which increases with increasing target-substrate distance. A balancing of these two effects results in stoichiometric deposition.

Foote, M. C.↗

All a-axis oriented YBa2Cu3O(7-y) - PrBa2Cu3O(7-z) - YBa2Cu3O(7-y) Josephson devices operating at 80 K

The controllable, reproducible fabrication of nonhysteretic Josephson devices with excess-current weak-link characteristics at temperatures up to 80 K have been demonstrated. The devices are patterned from in situ deposited a-axis oriented YBa2Cu3O(7-y) - PrBa2Cu3O(7-y) - YBa2Cu3O(7-y) trilayers grown on SrTiO3(001) substrates. Control of the critical current density and resistance is achieved by varying the thickness of the PrBa2Cu3O(7-z) barrier layer. Critical current densities in excess of 10,000 A/sq cm have been reproducibly measured; good uniformity across the wafer is obtained with device parameters scaling with device area. Strong constant-voltage current steps are observed under 11.2 GHz microwave radiation at temperatures up to and above 80 K.

Barner, J. B.↗