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Barker, R. C.

Publications and source records attributed to Barker, R. C..

15 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1981

Optically induced bistable states in metal/tunnel-oxide/semiconductor /MTOS/ junctions

A new switching phenomenon in metal-oxide semiconductor tunnel junction has been discovered. With a sufficiently large negative bias applied to the electrode, incident visible light of intensity greater than about 1 microW/sq cm causes the reverse-biased junction to switch from a low-current to a high-current state. It is believed that hot-electron-induced impact ionization provides the positive feedback necessary for switching, and causes the junction to remain in its high-current state after the optical excitation is removed. The junction may be switched back to the low-current state electrically. The basic junction characteristics have been measured, and a simple model for the switching phenomenon has been developed.

Lai, S. K.↗
NASA NTRS1980

Photoemission measurements of interface barrier energies for tunnel oxides on silicon

Internal photoemission measurements of the Si/SiO2 and Al/SiO2 barrier heights on oxides of tunneling thickness (43-56 A) are compared with measurements on thick oxides (310 A and greater) and the barrier heights are found to be the same. The results suggest that substantially thinner oxides, grown by the same method, can be characterized by the same barrier heights. Limits to the experimental technique posed by photovoltaic and displacement currents, and transport of hot carriers in the tunnel oxide are discussed.

Dressendorfer, P. V.↗
NASA NTRS1980

Processing dependence of metal/tunnel-oxide/silicon junctions

The effects of process variations on the fixed-charge density, interface-state density, and tunneling properties of tunnel oxides on (100) silicon are discussed. Annealing the oxide in nitrogen reduces the fixed-charge and interface-state densities substantially, but also causes a marked increase in oxide capacitance. Anneals in forming gas before metallization alter the interface-state distribution and decrease the insulating qualities of the tunneling oxides. Postmetallization anneals in forming gas reduce the interface-state density to 1 x 10 to the 11th e/sq cm V or below, and appear not to affect the current through the oxide. No evidence for metal-induced interface states is observed.

Dressendorfer, P. V.↗
NASA NTRS1976

Traps in Al2O3 detected by tunneling

A structure, quite different from inelastic tunneling peaks, has been observed in electron-tunneling spectra of MOM junctions. A capacitance peak is associated with this structure, which is attributed to traps in the oxide at energies smaller than those previously reported. The C-V characteristics calculated using a single-energy trap model agree with experimental results; however, no satisfactory explanation has yet been found to account for the strong temperature dependence of the trap energy levels.

Skarlatos, Y.↗
NASA NTRS1974

Surface-state spectra from thick-oxide MOS tunnel junctions

The conductance and capacitance of thick-oxide MOS tunnel junctions (SiO2 thickness 40 to 65 A) have been measured from 35 Hz to 210 kHz. It is demonstrated that the use of a thick-oxide MOS tunnel junction makes it possible to obtain the surface-state data throughout the whole silicon band gap with better resolution and better sensitivity than the conventional MOS capacitance techniques. A slight departure from equilibrium may occur in the voltage range where large tunnel current flows. Corrections to the energy scale must be made in this voltage range. A method for the evaluation of the junction quality is discussed. The simplified equivalent circuits necessary for the calculation of surface-state data are constructed under various bias conditions by an approach different from that used in a previously published work. The present work supports the model that at least some of the observed surface states are a consequence of the diffusion of contact metals into the oxide.

Ma, T. P.↗
NASA NTRS1974

Detection of dilute organic acids in water by inelastic tunneling spectroscopy

Study of inelastic electron tunneling spectroscopy (IETS) spectra obtained from junctions exposed to dilute solutions of organic molecules in both liquid and vapor phases. The results indicate that it is possible in principle to detect the presence and to measure the concentration of at least some organic molecules in dilute aqueous solution by means of the IETS technique. Some fine points pertaining to the application of this technique are discussed, and it is pointed out that through appropriate refinements IETS may become a valuable tool for analytical water chemistry.

Skarlatos, Y.↗
NASA NTRS1974

Effect of gamma-ray irradiation on the surface states of MOS tunnel junctions

Gamma-ray irradiation with doses up to 8 megarad produces no significant change on either the C(V) or the G(V) characteristics of MOS tunnel junctions with intermediate oxide thicknesses (40-60 A), whereas the expected flat-band shift toward negative electrode voltages occurs in control thick oxide capacitors. A simple tunneling model would explain the results if the radiation-generated hole traps are assumed to lie below the valence band of the silicon. The experiments also suggest that the observed radiation-generated interface states in conventional MOS devices are not due to the radiation damage of the silicon surface.

Ma, T. P.↗
NASA NTRS1972

Some new techniques for processing remotely obtained images by self-generated spectral masks.

An extension of a new technique that makes possible parallel, simultaneous processing of remotely obtained images is presented. The technique holds out promise for automatic onboard classification of data. The central feature involves the generation of binary masks, directly from the image, based on object reflectance data, that group objects into equivalence classes. These masks, called equivalence class masks, can be used in various logical combinations to isolate classes of objects with a priori known reflectance or radiance signatures. Experimental verification of the technique is furnished for simple scenes. A computational scheme, based on a sequence of integrated irradiance measurements on the image, that makes it possible to identify objects within an equivalence class is suggested.

Stark, H.↗