Atomistic Simulation Informs Interface Engineering of Nanoscale LiCoO 2
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Engineering topics
Publications and source records attributed to Banerjee, Amitava.
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The successful deployment of technologies for the electrocatalytic nitrogen reduction reaction (e-NRR) to synthesize ammonia would enable distributed ammonia production with lower greenhouse gas emissions compared to the Haber–Bosch process. However, electrocatalysts that can readily activate N 2 , promote selective ammonia formation over the competing hydrogen evolution reaction, and maintain stability under reaction conditions are needed to enable this technology. Herein, we give our perspective on metal oxynitrides (A x B y O w N z ) as an emerging and underexplored materials class for e-NRR. Furthermore, we contrast the activity, selectivity, and stability of metal oxynitrides with those of their metal nitride and metal oxide counterparts. We discuss the different possible e-NRR reaction mechanisms on metal oxynitrides, emphasize challenges related to using metal oxynitrides for e-NRR, and provide an outlook for future research. Ultimately, the huge design space of metal oxynitrides is ripe for exploration to find catalyst formulations that overcome some of the limitations of traditional metal oxides and metal nitrides for e-NRR.
The transition from insulator to conductor can be realized in some materials but requires modification of both the arrangement of atoms and their electronic configurations. This is often achieved by doping. Here we reveal a different mechanism the lattice may adopt to induce such a transition. Experiments showed the surprising finding that limited exposure to subband-gap light caused a permanent transition from an insulator state to a conductor state in the insulating oxide Ga 2 O 3 , with a nine orders of magnitude increase in electronic conduction. Furthermore, annealing up to 400 °C did not suppress or decrease the induced conductivity. Photoexcitation by light-induced modification in the charge state of defects and subsequent lattice distortion around them was suggested to be the underlying mechanism behind this transition. Density functional theory calculations confirmed that modifying the charge state of defects leads to redistribution of the localized electrons and massive structural distortion in the surrounding lattice, causing large shifts in the density of states and introducing new states with shallower energy levels. Both experimental and theoretical results revealed the introduction of stable shallow energy levels, explaining the mechanism behind the transition from an insulator to a conductor state by light. We suggest that this mechanism may occur in other wide band-gap metal oxides leading to drastic modification in their electronic properties.