Engineering topics
Publications and source records attributed to Bandara, S..
In this paper, we discuss the development of this very sensitive long-wavelength infrared (LWIR) camera based on a GaAs/AlGaAs QWIP focal plane array (FPA) and its performance in terms of quantum efficiency, NET, MRDT, uniformity, and operability.
An optimized long-wavelength two-color Quantum Well Infrared Phototdetector (QWIP) device structure has been designed. This device structure was grown on a three-inch semi-insulating GaAs substrate by molecular beam epitaxy (MBE).
Many commercial and government applications need high performance, large format, long-wavelength infrared (LWIR) detector arrays in the range of 6-20 mu.
Arguably one of the simplest device realizations of the classic - particle-in-a-box - problem of basic quantum mechanics is the Quantum Well Infrared Photodetector (QWIP).
An optimized long-wavelength very long-wavelength two-color Quantum Well Infrared Photodetector (QWIP) device structure has been designed.
Long wavelength Quantum Well Infrared Photodetector (QWIP) cameras developed at the Jet Propulsion Laboratory demonstrate the potential of GaAs/A1xGa1-xAs QWIP technology for highly sensitive, low power, low cost, and highly uniform large format FPA imaging systems.
In this paper, we discuss and compare the dependence of absorption, responsivity, dark current, and detectivity of QWIPs with the position of first excited state in the quantum well.
Intrinsic infrared detectors in the long-wavelength range (6 - 20 ??are based on interband transition which promotes an electron across the band gap (E(sub g)) from the valence band to the conduction band.
In this paper, we discuss the development of this very sensitive long-wavelength infrared (LWIR) camera based on a GaAs/AlGaAs QWIP focal plane array (FPA) and its performance in terms of quantum efficiency, NEAT, uniformity, and operability.
Quantum Well Infrared Photodetectors (QWIPs) offer greater flexibility than usual extrinsically doped semiconductor IR detectors because the wavelength of the peak response and cutoff can be continuously tailored by varying layer thickness (well width), barrier composition (barrier height), and carrier density (well doping density).
We have successfully fabricated intersubband GaAs/AlGaAs quantum well infrared photodetectors grown on GaAs-on-Si substrate and evaluated their structural, electrical, and optical characteristics. We have found that the performance is comparable to a similar detector structure grown on a semi-insulating GaAs substrate.
The partial intermixing of the well and barrier materials offers unique opportunities to shift locally the bandgap of quantum well structures (QW).
Diffractive optical elements (microlenses) for quantum will infrared photodetectors (QWIPs) were fabricated by two techniques: 1) standard lithography of a binary optical structure and 2) PMMA pattern transfer for an analog diffractive optic structure.