Engineering topics

Baldwin, Matthew J.

Publications and source records attributed to Baldwin, Matthew J..

4 records

DOE OSTI2024

Research and Development to Reduce Impurity Production and Transport of the Impurities to the Target in Linear Plasma Devices Using Helicon Plasma Sources

Linear plasma devices used to test plasma facing materials (PFMs) and components for fusion reactors are often suffering under the production of intrinsic impurities from the plasma source system. Most linear plasma devices use internal electrodes (hollow cathodes, reflex arc, or cascading arc), which typically are the source of the main impurities. The next-generation plasma generators use radio frequency (RF) plasma sources like helicons to avoid internal electrodes. However, high power operation of helicons has proven to result in impurity production due to the high rectified sheath voltages created. Depending on the plasma parameters and magnetic configuration, these impurities can be transported to the target and deposited there to unacceptable high levels. Here, in this contribution, the experimental results from Proto-MPEX are summarized, and the conclusions of the impurity source physics are given. Methods to reduce the impurity production, the impurity transport, and the net deposition on the target are presented. These methods to reduce the impurity production include Faraday screens to reduce the sheath voltage drop, high-Z refractory coatings to reduce the erosion yield, and wall conditioning methods. Methods to reduce the impurity transport include changes in the magnetic configuration as well as electron heating to change axial and radial temperature profiles. Preliminary results on the effectiveness of some of these methods are presented.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2024

Impurity transport in PISCES-RF

Linear plasma devices (LPD) utilizing a helicon plasma source, a high density light ion source, can generate impurities due to progressive erosion of the radio frequency (RF) transmission window caused by rectified sheath voltage. These source-born impurities can entrain and be transported by the plasma toward a target, affecting plasma-material interaction studies. Earlier work on material testing in Prototype-Materials Plasma Exposure eXperiment at ORNL revealed significant source impurity deposition on downstream targets. However, using a similar RF source, no target impurity deposition is observed in Plasma Interaction Surface Component Experimental Station (PISCES)-RF despite evidence of RF window erosion in the source region, thereby motivating the present work. Experimentally, using various magnetic field configurations upstream of the PISCES-RF plasma source and seeding titanium (Ti) impurities at various axial locations, impurity transport and deposition along the machine axis were investigated. It was found that Ti deposition was localized to the side of the plasma source where the Ti impurity was seeded. In contrast, aluminum (Al) deposition, originating from the sputtering of the helicon window, occurred predominantly upstream of the plasma source, suggesting an asymmetry in the axial transport of eroded RF window material. These observations suggest a stagnation of the parallel plasma flow immediately downstream of the plasma source, with impurity ions remaining unmagnetized near the source upstream. Al deposition in magnetic field-free regions in PISCES-RF indicates that sputtered Al impurities likely remained neutral due to their large ionization mean-free path under PISCES-RF conditions. Plasma modeling and simulation supported this, indicating that Al-neutrals transport toward the helicon source upstream for low electron density cases. It was found that the Larmor radius of the Al ions was greater than the plasma radius towards the source upstream and remained weakly magnetized in PISCES-RF, meaning that plasma source-born impurities are not efficiently entrained in the plasma flow. These findings provide critical insights into impurity transport in helicon plasma-based LPDs.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2024

In-situ ETEM study of plasma-facing tungsten nanofuzz oxidation at atmospheric pressure: Microstructure evolution and substrate-free oxidation kinetics

To enable sustainable carbon-free fusion energy, managing reactor structural material degradation during normal operation as well as accident scenarios is vital. Tungsten (W) plasma-facing materials (PFMs) are susceptible to aggressive high-temperature oxidation during air-ingress fusion reactor accidents, yet there's a lack of oxidation kinetic data for irradiated tungsten. Here, in this study, we utilize atmospheric environmental transmission electron microscopy (ETEM) to present the first kinetic data for substrate-free W nanofuzz oxidation at 400 ºC and 500 ºC in 1 bar dry air. Comparison with pristine bulk W during the early parabolic stage suggests an irradiationdecelerated oxidation for W nanofuzz. Our time-resolved in-situ characterization reveals a durable amorphous surface oxide, likely promoted by high-flux He + irradiation-induced surface defects, serving as an effective passivating layer that impedes nanofuzz oxidation onset. This surface oxide layer also interfaces well with newly formed orthorhombic WO 3 , facilitated by stress relief through He bubble shrinkage, providing lasting passivating protection throughout the nanofuzz parabolic oxidation. This new finding challenges conventional notions of irradiation's negative impact on metal oxidation, and calls for advanced characterization to enhance our understanding of fusion energy materials degradation, informed by further accident modeling.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Observation of tantalum deposition and growth on TiB2 and ZrB2 from PISCES-RF deuterium and helium plasma exposures

Deuterium and helium plasma exposures on bulk TiB2 and ZrB2 samples were performed using the PISCES-RF linear plasma device. 40 and 90 eV deuterium ion plasma exposures were performed at 240 and 800 °C sample temperatures, and 80 eV helium ion plasma exposures were performed at 800 °C sample temperatures. Following plasma exposures, it was discovered that two plasma conditions (90 eV deuterium and 80 eV helium at 800 °C) resulted in thick (>200 nm) tantalum-rich (>10 at%) surface features on the targets, presumably from tantalum sourced from a tantalum adapter mask or cap used as part of the target holder. This work aims to characterize these tantalum-rich features and examine the mechanisms of impurity deposition.Plasma-induced surface morphology of the tantalum-rich surface layers depends on plasma properties and target temperature and chemistry. Greater titanium sputtering compared to zirconium resulted in more distinct surface features in the TiB2 samples compared to the ZrB2 samples via increased, prompt deposition onto tantalum surface impurities. There is still uncertainty as to why thick tantalum deposition only occurred under some plasma exposure conditions but not others; it is likely due to tantalum sputtering by a combination of boron molecules from the targets and carbon-impurities in the tantalum mask or targets. Impurity driven surface features are a well-documented phenomena in samples exposed to plasma from linear plasma device facilities—this work confirms the occurrence of this and emphasizes the need for chemistry characterization of isolated post-mortem surface features in plasma-exposed samples.

Nuckols, Lauren↗