Engineering topics

Baker, W. D.

Publications and source records attributed to Baker, W. D..

5 records

NASA NTRS1976

X-ray quantum efficiencies of CCD's

The X-ray quantum efficiency of a CCD was still high enough to obtain good X-ray imaging with this device. The range and response of the CCD to incident X-rays in the 5 to 14.1 KeV range were determined experimentally. Knowledge of this range and response allows direct measurement of quantum efficiency. Quantum efficiency decreased monotonically from 82% to 35% in the range studied. Comparison of experimental and theoretical quantum efficiencies allowed a determination of silicon bulk electron diffusion length. For the device studied, the electron diffusion length was 75 micrometers.

Peckerar, M.↗

NASA NTRS1976

Effects of neutron irradiation on the characteristics of a buried channel CCD at 80 degrees Kelvin and 295 degrees Kelvin

Buried channel CCD shift registers were irradiated with 15 MeV neutrons. The irradiations were performed at 80 K and 295 K on operating devices with normal clocks and bias voltages applied. Dark current increased from the pre-irradiation value of 7 nA/sq cm to 1,600 nA/sq cm at 1 x 10 to the 13th power n/sq cm. The input gate threshold shift observed at 80K was minus 0.9 volts per 10 to the 13th power n/sq cm, a factor of 4 less than that predicted from a first order calculation of the equivalent ionization dose of neutrons in the oxide. Transfer efficiency measurements yielded a bulk electron trap creation rate for neutron irradiation of 14.0 cm to the minus 1 power at 295 K with a trap emission time constant of 25 microseconds.

Saks, N. S.↗

NASA NTRS1975

Imaging performance of a CCD area array at 200 K

The performance of a 100 x 100 charge coupled device imager was evaluated in the vicinity of 200 K. A set of operating conditions was determined which permits satisfactory operation of the imager from 300 K to 150 K while assuring maximum tolerance to ionizing radiation. Good imaging has been obtained for integration times in excess of 10 seconds at 200 K. Preliminary results on image storage indicate that storage times of many seconds are possible at 200 K.

Baker, W. D.↗

NASA NTRS1975

Effects of ionizing radiation on charge-coupled imagers

The effects of ionizing radiation on three different charge coupled imagers have been investigated. Device performance was evaluated as a function of total gamma ray dose. The principal failure mechanisms have been identified for each particular device structure. The clock and bias voltages required for high total dose operation of the devices are presented.

Killiany, J. M.↗

NASA NTRS1969

ZnTe-InAs heterojunctions

Fabrication and electrical properties of p-ZnTe/n-InAs heterojunctions obtained by interface alloying, suggesting p-i-n structure from characteristics and capacitance behavior

Baker, W. D.↗