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Bafia, Daniel [Fermilab]

Publications and source records attributed to Bafia, Daniel [Fermilab].

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Correlating Surface Processing of Nb Superconducting RF Cavities with the Evolution of Surface Electronic States

Superconducting-radio frequency (RF) cavities provide an efficient way to accelerate particle beams with extremely high acceleration gradients while generating very small power dissipation. The few nanometers of the surface play a critical role in defining the RF performance of superconducting Nb based cavities. Over the past two decades, several pioneering surface treatment and processing methods have emerged, enabling remarkable improvements in superconducting cavity performance by simultaneously achieving high quality factors with increasing maximum acceleration gradients. These processing approaches include chemical polishing, distinct multi-step thermal treatments under ultra-high vacuum (UHV) conditions over low to high temperature regimes, as well as high-temperature treatments under controlled nitrogen atmospheres. Beyond their macroscopic impact on RF performance, these methods produce distinct surface oxide configurations characterized by different valence states, oxide thicknesses, chemical uniformity, and oxygen concentration profiles extending into the near-surface bulk of niobium. In this work, we are trying to understand how the surface-processing methods and the resulting oxide/oxygen profiles affect the electronic structure of surface and the mechanism of superconductivity. Using a combination of X-ray photoemission and X-ray absorption spectroscopies, we investigate how the valence-band structure and the electronic density of states (DoS) near the Fermi level evolve under different surface treatments. By employing tunable photon energies across multiple elemental absorption edges, we use resonant photoemission to disentangle and identify the elemental contributions to specific valence-band features. Our observations show that different surface-processing methods lead to distinct temperature evolutions of the DoS and valence-band states near the Fermi level. Our results suggest variations in different Nb-O orbital hybridizations in distinct processes and point towards the possibility of different underlying mechanisms of superconductivity governed by surface chemistry and oxide configuration. We also correlate these distinct superconducting mechanisms with RF cavity performance, specifically focusing on measured surface resistance, the nature of the Q-slope, and quench fields observed in superconducting RF measurements. These results will enable us to identify the potential limiting factors and relevant controllable parameters that can be further optimized to improve the performance of superconducting RF cavities.

Tripathi, Malvika [Fermilab] (ORCID:00000001989251↗
DOE OSTI2026

Measuring Loss Tangents of Substrates for Superconducting Qubits with Part-per-Billion Precision

We report precision measurements of dielectric loss tangents in substrates for superconducting qubits using an ultra-high quality factor niobium SRF cavity operating at millikelvin temperatures and low electric fields. Multiple substrate types and surface treatments are compared to assess how processing impacts microwave dissipation. The RF results are correlated with materials analysis, including ToF-SIMS and XPS, to identify dominant loss mechanisms. This combined study links microscopic surface chemistry to macroscopic performance and provides a framework for materials-driven improvements in qubit coherence and device design.

Bafia, Daniel [Fermilab]↗
DOE OSTI2026

A New Route Toward Atomically Flat and Defect-Free Ge/SiGe Planar Heterostructures

Germanium-based planar heterostructures are emerging as versatile platforms for realizing quantum devices. In particular, planar Ge/SiGe quantum wells (QWs) host hole states with exceptionally high mobility and strong, electrically tunable spin–orbit interactions, enabling full electrical control of quantum information. A key requirement for these systems is the growth of microscopic, defect-free, atomically flat Ge QW heterostructures on relaxed or reverse-graded SiGe buffer layers, as well as on commercial Ge substrates. While several physical deposition techniques have demonstrated high-quality planar Ge/SiGe QWs, a major challenge remains: minimizing defect density typically requires high growth temperatures, which are incompatible with standard CMOS process flows. Here, we present a convenient low-temperature process for realizing high-quality planar SiGe/Ge heterostructures using a combination of thermal and electron-beam evaporation. We systematically map the effects of ex-situ and in-situ substrate preparation protocols, growth temperature, and post-deposition annealing conditions, and correlate these parameters with surface roughness and defect density. We find that in-situ oxide desorption conditions and post-annealing parameters have the most pronounced impact on improving surface quality. Under optimized conditions, we achieve atomically smooth surfaces with root-mean-square roughness σrms​ ≤ 10 Å and negligible defect density. Interestingly, thermally evaporated Ge layers exhibit oriented triangular crystallites that elongate upon post-annealing in the presence of high Ge vapor pressure. These results demonstrate that this simple, low-temperature deposition approach is a viable and effective route for achieving high-quality Ge QW heterostructures, with strong potential for scalable quantum computing and sensing applications.

Tripathi, Malvika [Fermilab] (ORCID:00000001989251↗
DOE OSTI2026

Measuring Loss Tangents of Substrates for Superconducting Qubits with Part-per-Billion Precision

We report precision measurements of dielectric loss tangents in substrates for superconducting qubits using an ultra-high quality factor niobium SRF cavity operating at millikelvin temperatures and low electric fields. Multiple substrate types and surface treatments are compared to assess how processing impacts microwave dissipation. The RF results are correlated with materials analysis, including ToF-SIMS and XPS, to identify dominant loss mechanisms. This combined study links microscopic surface chemistry to macroscopic performance and provides a framework for materials-driven improvements in qubit coherence and device design.

Bafia, Daniel [Fermilab]↗
DOE OSTI2026

A New Route Toward Atomically Flat and Defect-Free Ge/SiGe Planar Heterostructures

Germanium-based planar heterostructures are emerging as versatile platforms for realizing quantum devices. In particular, planar Ge/SiGe quantum wells (QWs) host hole states with exceptionally high mobility and strong, electrically tunable spin–orbit interactions, enabling full electrical control of quantum information. A key requirement for these systems is the growth of microscopic, defect-free, atomically flat Ge QW heterostructures on relaxed or reverse-graded SiGe buffer layers, as well as on commercial Ge substrates. While several physical deposition techniques have demonstrated high-quality planar Ge/SiGe QWs, a major challenge remains: minimizing defect density typically requires high growth temperatures, which are incompatible with standard CMOS process flows. Here, we present a convenient low-temperature process for realizing high-quality planar SiGe/Ge heterostructures using a combination of thermal and electron-beam evaporation. We systematically map the effects of ex-situ and in-situ substrate preparation protocols, growth temperature, and post-deposition annealing conditions, and correlate these parameters with surface roughness and defect density. We find that in-situ oxide desorption conditions and post-annealing parameters have the most pronounced impact on improving surface quality. Under optimized conditions, we achieve atomically smooth surfaces with root-mean-square roughness σrms​ ≤ 10 Å and negligible defect density. Interestingly, thermally evaporated Ge layers exhibit oriented triangular crystallites that elongate upon post-annealing in the presence of high Ge vapor pressure. These results demonstrate that this simple, low-temperature deposition approach is a viable and effective route for achieving high-quality Ge QW heterostructures, with strong potential for scalable quantum computing and sensing applications.

Tripathi, Malvika [Fermilab] (ORCID:00000001989251↗
DOE OSTI2026

How nitrogen and oxygen shape SRF cavity performance

Nitrogen and oxygen-based surface treatments have revolutionized the performance of superconducting radiofrequency (SRF) cavities, enabling them to reach higher gradients and lower losses. However, the exact mechanisms by which these treatments improve cavity performance remain largely unknown. This work provides new insights into the role of nitrogen and oxygen in SRF cavity performance by using time-of-flight secondary ion mass spectrometry (TOF-SIMS) to precisely quantify the concentrations and depth profiles of these impurities within niobium cutouts. We correlate these impurity profiles with detailed cavity performance measurements, including surface resistance and quality factor, and compare our findings with predictions from BCS theory. The results demonstrate that while both nitrogen and oxygen enhance performance, ten times more oxygen is required to achieve the same reduction in BCS resistance as interstitial nitrogen. We present a potential model in which the observed variation arises from nitrogen's greater effectiveness in trapping hydrogen, thus reducing the formation of niobium hydrides and enhancing superconducting gap.

Hu, Hannah [Chicago U.]↗
DOE OSTI2026

Analysis of vapor diffusion Nb$^{3}$Sn coating at Fermilab: Minimizing impurities using TOF-SIMS

Nb₃Sn demonstrates steady advancements nowadays offering reduced power cost in superconducting radio-frequency cavities due to its high critical temperature, quality factor, and achieved accelerating gradient. However, theoretical estimates of its radio-frequency parameters have not been achieved due to several potentially limiting mechanisms: tin spots, patchy regions, defects, thermal impedance, and impurities. While some of these limitations have been intensively studied, impurity analysis in Nb$_3$Sn coatings have received less attention. We report an investigation of impurities in several vapor-diffused Nb₃Sn coated samples using time-of-flight secondary ion mass spectroscopy (TOF-SIMS) and show allowable impurity levels in view of superconducting cavity performance. Challenges and lessons learned in maintaining clean Nb$_3$Sn coatings are also discussed.

Tagdulang, Nikki [Fermilab]↗
DOE OSTI2025

Correlating Nb-SRF Surface Processing with Evolution of Surface Electronic States

The few nanometers of the surface exposed to RF field plays a major role in defining the RF performance of superconducting cavities. Over the past two decades, several pioneering surface treatment and processing methods have emerged, enabling remarkable improvements in cavity performance by simultaneously achieving high Q with increasing Eacc. These processing methods include: thermal treatment under ultra-high vacuum (UHV) conditions across lo¬¬¬¬¬¬¬w-, mid-, and high-temperature ranges and high temperature treatments under controlled N2 atmosphere. These processes also produce distinct surface oxide configurations with different valence states, thicknesses, and uniformity, as well as different oxygen concentration profiles in bulk Nb. In this work, we are trying to understand how do surface-processing methods and the resulting oxide/oxygen profiles affect the electronic structure of surface and the mechanism of superconductivity? With the help of Fermilab’s in-house X-ray photoemission facility and, in collaboration with the synchrotron-based angle-resolved photoemission (ARPES) facility at Argonne National Laboratory, we are investigating how the valence band structure and density of states (DoS) near the Fermi level modify with different surface treatments. Our observations show that different surface-processing methods lead to distinct evolutions of the valence-band states near the Fermi level during the superconducting transition. This behavior suggests variations in Nb-O orbital hybridizations and points towards the possibility of different underlying mechanisms of superconductivity governed by the surface chemistry and oxide configuration. We also correlate these distinct superconducting mechanisms with RF cavity performance, specifically focusing on measured surface resistance, the nature of the Q-slope, and quench fields observed in SRF measurements. These results will enable us to identify the potential limiting factors and relevant controllable parameters that can be further optimized to improve the performance of SRF cavities.

Tripathi, Malvika [Fermilab]↗
DOE OSTI2025

Understanding and Mitigating Coherence and Frequency Fluctuations in Superconducting Transmon Qubits

Transmon qubits are a cornerstone of superconducting quantum computing platforms. However‚ their frequency and coherence properties exhibit temporal fluctuations‚ leading to performance degradation in quantum processors over time. A common mitigation approach involves frequent recalibration‚ which‚ while effective‚ results in increased system downtime. Enhancing the long-term stability of transmon qubits is therefore critical for scalable and reliable quantum computing. In this study‚ we develop novel techniques for understanding the underlying mechanisms driving frequency and coherence fluctuations in fixed-frequency transmon qubits. We further explore strategies to mitigate these instabilities‚ aiming to improve overall system robustness. Our findings provide insights into optimizing superconducting quantum hardware for practical applications.

Roy, Tanay [Fermilab]↗
DOE OSTI2025

Application of Accelerator Technology to Quantum Information Science

The intersection of accelerator and quantum information science (QIS) offers a unique platform to advance both fields through shared technology and infrastructure. This talk will discuss the synergies which exist between these two vastly different but complementary domains. We demonstrate how we leverage pre-existing infrastructure and knowledge to perform research and development which helps to realize dramatic improvements in both 10 km long accelerators and 10 cm large quantum processors. We will explore niobium superconducting radio-frequency (SRF) cavities, a highly advanced technology that excels in efficiently storing electromagnetic energy, enabling ultra-long photon lifetimes critical for quantum processors and facilitating the characterization of quantum materials with parts-per-billion precision. We will also discuss how advancements in superconducting materials, cryogenic systems, and control techniques help to reduce cost and improve performance for both quantum systems and particle accelerators. Moreover, we will discuss cross-disciplinary applications such as dark-matter searches and demonstrate the convergence of these fields in addressing fundamental scientific questions.

Bafia, Daniel [Fermilab]↗
DOE OSTI2025

Ultracoherent superconducting cavity-based multiqudit platform with error-resilient control

Superconducting radio-frequency (SRF) cavities offer a promising platform for quantum computing due to their long coherence times, yet integrating nonlinear elements like transmons for control often introduces additional loss. We report a multimode quantum system based on a 2-cell elliptical shaped SRF cavity, comprising two cavity modes weakly coupled to an ancillary transmon circuit, designed to preserve coherence while enabling efficient control of the cavity modes. We mitigate the detrimental effects of the transmon decoherence through careful design optimization that reduces transmon-cavity couplings and participation in the dielectric substrate and lossy interfaces, to achieve single-photon lifetimes of 20.6 ms and 15.6 ms for the two modes, and a pure dephasing time exceeding 40 ms. This marks an order-of-magnitude improvement over prior 3D multimode memories. Leveraging sideband interactions and novel error-resilient protocols, including measurement-based correction and post-selection, we achieve high-fidelity control over quantum states. This enables the preparation of Fock states up to $N = 20$ with fidelities exceeding 95%, the highest reported to date to the authors' knowledge, as well as two-mode entanglement with an estimated coherence-limited fidelities of 99.9% after post-selection. These results establish our platform as a robust foundation for quantum information processing, allowing for future extensions to high-dimensional qudit encodings.

Kim, Taeyoon [Fermilab; Northwestern U.]↗
DOE OSTI2025

Demonstrating magnetic field robustness and reducing temporal T1 noise in transmon qubits through magnetic field engineering

The coherence of superconducting transmon qubits is often disrupted by fluctuations in the energy relaxation time (T1), limiting their performance for quantum computing. While background magnetic fields can be harmful to superconducting devices, we demonstrate that both trapped magnetic flux and externally applied static magnetic fields can suppress temporal fluctuations in T1 without significantly degrading its average value or qubit frequency. Using a three-axis Helmholtz coil system, we applied calibrated magnetic fields perpendicular to the qubit plane during cooldown and operation. Remarkably, transmon qubits based on tantalum-capped niobium (Nb/Ta) capacitive pads and aluminum-based Josephson junctions (JJs) maintained T1 lifetimes near 300 μs even when cooled in fields as high as 600 mG. Both trapped flux up to 600 mG and applied fields up to 400 mG reduced T1 fluctuations by more than a factor of two, while higher field strengths caused rapid coherence degradation. We attribute this stabilization to the polarization of paramagnetic impurities, the role of trapped flux as a sink for non-equilibrium quasiparticles (QPs), and partial saturation of fluctuating two-level systems (TLSs). These findings challenge the conventional view that magnetic fields are inherently detrimental and introduce a strategy for mitigating noise in superconducting qubits, offering a practical path toward more stable and scalable quantum systems.

Abdisatarov, Bektur [Fermilab; Jefferson Lab]↗
DOE OSTI2025

Pathway to tune sputter coated Nb$_3$Sn with Zr

Superconducting radio frequency (SRF) cavities are essential elements of many modern-day particle accelerators such as, European XFEL (DESY), LCLS II-HE (SLAC) and PIP II (Fermilab). Nb$_3$Sn superconducting material promises significant potential to exceed the performance of conventional niobium based SRF cavities. We aim to advance the ongoing R$&$D efforts to achieve Nb$_3$Sn coated cavities with high material quality. In this work, we have developed to achieve a route for effectively reducing the intrinsic defects in magnetron sputter coated Nb$_3$Sn SRF cavities and eventually improve the overall RF performance. We have observed that Zr is mainly being incorporated as ZrO$_2$ precipitates of average dimensions ranging from 20-100nm. By increasing the concentration of Zr, we have three major effects in the physical properties. Firstly, we noted that the density of the surface and bulk voids as well as their average dimensions are dramatically reduced on increasing the Zr content in Nb$_3$Sn. These surface voids are believed to be detrimental to cavity applications due to increase the local dissipation of electric and magnetic fields. These results indicate that inclusion of Zr in Nb$_3$Sn sputtered coating will improve the material quality and might help to reduce the overall RF power dissipation. Secondly, we observed that increasing Zr concentration from 0 to 2.4% substantially improves both superconducting transition temperature (Tc) and upper critical magnetic field (Hc2). However, on further increasing the Zr concentration to 24%, we noticed a small decrement in the Hc2 value. These results infer that the increase in Zr concentration up to an optimal concentration will be beneficial to enhance the superconducting properties. Increase in Tc promises lesser RF losses and improvement in accelerating gradient, whereas the increase in Hc2 suggests more efficient flux pinning which could give rise to high quality factors in presence of multi-Tesla magnetic field. Additionally, we also observed that increasing Zr concentration possibly prevents the oxygen diffusion and leads to thinner formation of primary surface oxide (Nb$_2$O$_5$ and SnO). This study gives a route to tune Zr fraction in Nb3Sn to modify the physical properties that control the high field performance of Nb3Sn RF cavities.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗