Engineering topics

Attia, John O.

Publications and source records attributed to Attia, John O..

3 records

NASA NTRS2001

Power Quality and Reliability Project

One area where universities and industry can link is in the area of power systems reliability and quality - key concepts in the commercial, industrial and public sector engineering environments. Prairie View A&M University (PVAMU) has established a collaborative relationship with the University of'Texas at Arlington (UTA), NASA/Johnson Space Center (JSC), and EP&C Engineering and Technology Group (EP&C) a small disadvantage business that specializes in power quality and engineering services. The primary goal of this collaboration is to facilitate the development and implementation of a Strategic Integrated power/Systems Reliability and Curriculum Enhancement Program. The objectives of first phase of this work are: (a) to develop a course in power quality and reliability, (b) to use the campus of Prairie View A&M University as a laboratory for the study of systems reliability and quality issues, (c) to provide students with NASA/EPC shadowing and Internship experience. In this work, a course, titled "Reliability Analysis of Electrical Facilities" was developed and taught for two semesters. About thirty seven has benefited directly from this course. A laboratory accompanying the course was also developed. Four facilities at Prairie View A&M University were surveyed. Some tests that were performed are (i) earth-ground testing, (ii) voltage, amperage and harmonics of various panels in the buildings, (iii) checking the wire sizes to see if they were the right size for the load that they were carrying, (iv) vibration tests to test the status of the engines or chillers and water pumps, (v) infrared testing to the test arcing or misfiring of electrical or mechanical systems.

Attia, John O.↗

NASA NTRS2001

Radiation Effects on DC-DC Converters

In this work, several DC-DC converters were designed and built. The converters are Buck Buck-Boost, Cuk, Flyback, and full-bridge zero-voltage switched. The total ionizing dose radiation and single event effects on the converters were investigated. The experimental results for the TID effects tests show that the voltages of the Buck Buck-Boost, Cuk, and Flyback converters increase as total dose increased when using power MOSFET IRF250 as a switching transistor. The change in output voltage with total dose is highest for the Buck converter and the lowest for Flyback converter. The trend of increase in output voltages with total dose in the present work agrees with those of the literature. The trends of the experimental results also agree with those obtained from PSPICE simulation. For the full-bridge zero-voltage switch converter, it was observed that the dc-dc converter with IRF250 power MOSFET did not show a significant change of output voltage with total dose. In addition, for the dc-dc converter with FSF254R4 radiation-hardened power MOSFET, the output voltage did not change significantly with total dose. The experimental results were confirmed by PSPICE simulation that showed that FB-ZVS converter with IRF250 power MOSFET's was not affected with the increase in total ionizing dose. Single Event Effects (SEE) radiation tests were performed on FB-ZVS converters. It was observed that the FB-ZVS converter with the IRF250 power MOSFET, when the device was irradiated with Krypton ion with ion-energy of 150 MeV and LET of 41.3 MeV-square cm/mg, the output voltage increased with the increase in fluence. However, for Krypton with ion-energy of 600 MeV and LET of 33.65 MeV-square cm/mg, and two out of four transistors of the converter were permanently damaged. The dc-dc converter with FSF254R4 radiation hardened power MOSFET's did not show significant change at the output voltage with fluence while being irradiated by Krypton with ion energy of 1.20 GeV and LET of 25.97 MeV-square cm/mg. This might be due to fact that the device is radiation hardened.

Zhang, De-Xin↗

NASA NTRS2000

Radiation effects on DC-DC Converters

DC-DC switching converters are circuits that can be used to convert a DC voltage of one value to another by switching action. They are increasing being used in space systems. Most of the popular DC-DC switching converters utilize power MOSFETs. However power MOSFETs, when subjected to radiation, are susceptible to degradation of device characteristics or catastrophic failure. This work focuses on the effects of total ionizing dose on converter performance. Four fundamental switching converters (buck converter, buck-boost converter, cuk converter, and flyback converter) were built using Harris IRF250 power MOSFETs. These converters were designed for converting an input of 60 volts to an output of about 12 volts with a switching frequency of 100 kHz. The four converters were irradiated with a Co-60 gamma source at dose rate of 217 rad/min. The performances of the four converters were examined during the exposure to the radiation. The experimental results show that the output voltage of the converters increases as total dose increases. However, the increases of the output voltage were different for the four different converters, with the buck converter and cuk converter the highest and the flyback converter the lowest. We observed significant increases in output voltage for cuk converter at a total dose of 24 krad (si).

Zhang, Dexin↗