Switching Characterization of Wide-Bandgap Power Semiconductor Devices.
Abstract not provided.
Flicker, Jack David↗
Engineering topics
Atcitty, Stanley
Publications and source records attributed to Atcitty, Stanley.
gamma'-Fe4N a new soft magnetic material for inductors and motors.
Abstract not provided.
Monson, Todd↗
Reliable High-Performance Gate Oxides for Wide Band Gap Devices.
Abstract not provided.
Ihlefeld, Jon↗
Soft magnetic laminated FeSiCrB-FexN metallic glass composites fabricated via spark plasma sintering.
Abstract not provided.
Monson, Todd↗
III-nitride surface chemistry influence on band offsets of gate oxides on GaN.
Abstract not provided.
Paisley, Elizabeth A↗
Spectroscopic investigations of band offsets of MgO|Al x Ga 1-x N epitaxial heterostructures with varying AlN content.
Epitaxial (111) Mg0 films were prepared on (0001) Al x Ga 1-x N via molecular-beam epitaxy for x=0 to x=0.67. Valence band offsets of Mg0 to Al x Ga 1-x N were measured using X-ray photoelectron spectroscopy as 1.65 ± 0.07 eV, 1.36 ± 0.05 eV, and1.05 ± 0.09 eV for x=0, 0.28, and 0.67, respectively. This yielded conduction band offsets of 2.75 eV, 2.39 eV, and 1.63 eV for x=0, 0.28, and 0.67, respectively. All band offsets measured between Mg0 and Al x Ga 1-x N provide a > 1 eV barrier height to the semiconductor.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Reliable High-Performance Gate Oxides for Wide Band Gap Devices.
Abstract not provided.
Ihlefeld, Jon↗
Elimination of Fast Interface States Using Phosphorus Passivation in 4H-SiC MOS Capacitors for Improved Power MOSFET Performance and Reliability.
Abstract not provided.
Hughart, David Russell↗
Elimination of Fast Interface States Using Phosphorus Passivation in 4H-SiC MOS Capacitors for Improved Power MOSFET Performance and Reliability.
Abstract not provided.
Hughart, David Russell↗
Elimination of Fast Interface States Using Phosphorus Passivation in 4H-SiC MOS Capacitors for Improved Power MOSFET Performance and Reliability.
Abstract not provided.
Hughart, David Russell↗
Reliable High-Performance Gate Oxides for Wide Band Gap Devices.
Abstract not provided.
Ihlefeld, Jon↗
Sandia National Laboratories/Energy Storage Program: An Overview.
Abstract not provided.
Atcitty, Stanley↗