Wide bandwidth TM tunable vernier rings for heterogeneously integrated lasers
Explore the source record for details and available documents.
Engineering topics
Publications and source records attributed to Arterburn, Shawn Carson.
Explore the source record for details and available documents.
Explore the source record for details and available documents.
Explore the source record for details and available documents.
Explore the source record for details and available documents.
Explore the source record for details and available documents.
Hybrid bonded silicon nitride thin-film lithium niobate (TFLN) Mach-Zehnder modulators (MZMs) at 1310 nm were designed with metal coplanar waveguide electrodes buried in the silicon-on-insulator (SOI) chip. Here, the MZM devices showed greatly improved performance compared to earlier devices of a similar design, and similar performance to comparable MZM devices with gold electrodes made on top of the TFLN layer. Both devices achieve a 3-dB electro-optic bandwidth greater than 110 GHz and voltage-driven optical extinction ratios greater than 28 dB. Half-wave voltage-length products (VπL) of 2.8 and 2.5 V∙ cm were measured for the 0.5 and 0.4 cm long buried metal and top gold electrode MZMs, respectively.