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Arnold, Bradley

Publications and source records attributed to Arnold, Bradley.

Distorted Perovskites for High Voltage Dielectric Capacitors

There are several mechanisms which have been proposed for the existence of colossal dielectric constant in the class of perovskite calcium copper titanate (CaCu3Ti4O12 or CCTO) materials. Researches indicate that existence of twinning parallel to (100) (001) and (010) planes causes planar defects and causes changes in local electronic structure. This change can cause insulating barriers locally which contribute to the large dielectric values irrespective of processing. The combination of insulating barriers, defects and displacements caused by twinning have been attributed to the generation of large dielectric constant in CCTO. To examine some of these arguments some researchers replaced Ca with other elements and evaluated this concept. In this study we present the synthesis and characterization of Ga2/3Cu3Ti4O12-xNx (GCTON) material. This provides both distortion due to atomic size difference and defects due to insertion of nitrogen. The morphology of the compound was determined to show that processing has tremendous effect on the dielectric values. The resistivity of GCTON was several order higher than CCTO and dielectric constant was higher than 10,000.

Gill, Puneet

Design of Materials for IR Detectors Using High Z Elements for High Energy Radiation Environment

There is a strong need for rad hard and high operating temperature IR detectors for space environment. Heavy metal Selenides (high Z and large density) have been investigated for more than half century for high operating temperature mid wave infrared (MWIR) applications. Most of the efforts have been devoted to make detector arrays on high-resistivity Si substrates for operating wavelengths in the 1.5 to 5.0 m region using physical vapor transport grown poly crystalline materials. For most of the biological spectral and imaging applications, short wave infrared (SWIR) detectors have shown better performance. Recent growth materials have shown variation in morphology with slight change in growth conditions and hence variation in performance parameters such as bandgap, mobility and resistivity from sample to sample. We have performed growth and optical characterization of binary materials CdSe-PbSe to determine the suitability for IR detector. We have determined bandgap using several theoretical models for different morphologies observed during growth on silicon wafers.

Saraf, Sonali

Effect of Processing on Morphology of Hydroxyapatites: Bioactive Glasses and Crystalline Composites

Recent studies on multinary oxides for applications as laser hosts and high dielectric capacitors have shown that processing at high temperature provides glassy or crystalline materials based on thermal treatments and cooling rates. Since hydroxyapatites are now subject of great interests due to their bioactivity, interest in producing soft and hard materials with glassy and crystalline nature by processing parameters has become very important. Crystalline materials by using Bridgman, Czochralski and flux growth methods are costly and require huge investment. We have observed that even low temperature solidification in organic flux produced oriented fibers. This organic treated material has different characteristics than in situ oxide materials prepared by sintering and grain growth. Examples of phosphate and silicate-based systems will be presented to demonstrate soft and hard materials. Effect of TiO2 and other hardening elements will be also reported.

McAdams, Joel

Development of Large Bandgap Materials Using Reactive Growth in Al-SI Eutectic for Optical and RF Applications

Carbon was utilized as reactive element to modify the microstructure using forced mixing during crystallization of the Al-Si alloy by rotation and stirring. We nucleated the material on SiC substrates while the Al-Si melt was rotated with a speed of 30rpm in a graphite crucible. Several experiments were performed and parameters such as time of mixing, soaking temperature, rotation rate of the substrate and rate of cooling during the solidification was changed. We observed dendrite and cell morphologies during the solidification of rotating melt. The microstructure was characterized by optical microscopy and SEM-EDX and compositional spectroscopy. The effect of carbon impurities was studied on the solidifying microstructure. When we used the longer soak time of the melt in presence of carbon impurities we observed the destruction of dendritic morphology and the formation of cellular and colony structures. Similar approach has been used for Ga2O3, a novel large bandgap material also.

Singh, N. B.

Nanoengineered Materials for SWIR HOT Detectors

Heavy metal Selenide has been investigated for more than half century for high operating temperature (HOT) mid wave infrared (MWIR) applications. Most of the efforts have been devoted to make detector arrays on high-resistivity Si substrates for operating wavelengths in the 1.5 to 5.0 m region using physical vapor transport grown poly crystalline materials. For most of the biological spectral and imaging applications, short wave infrared (SWIR) detectors have shown better performance. Recent growth materials have shown variation in morphology with slight change in growth conditions and hence variation in performance parameters such as bandgap, mobility and resistivity from sample to sample. We have performed growth and optical characterization of pure and doped PbS and PbSe and have determined bandgap using available theoretical models for different morphologies.

Singh, N. B.

Growth of Bio Sensor Materials by Physical Vapor Transport Method

Recently there is a big thrust on bio-inspired sensors and there has been a large rise in the investment and expectations for nanotechnology to meet these goals. For in situ sensor development materials deposition on substrate is essential part of device development. Physical vapor deposition (PVD), chemical vapor deposition (CVD) and molecular organic vapor deposition methods have developed for growth of semiconductor bulk and thin film growth with some modifications have been used for these materials. Oxides and other elements of the VI group such as sulfides and selenides are key components in the skins of many species. Growth of ordered structures containing these elements have been achieved by using PVD method. This paper describes effect of growth parameters during PVD growth on the quality of materials. Growth kinetics and mechanism will be discussed for the vertical and horizontal growth reactors. Since most of the efficient materials systems are multinary and in many cases non-congruent, PVD provides a pathway to grow materials below melting temperature.

Sachs, David

Role of a Chemist in Modern Industries: Design and Development of Nanoengineered Multifunctional Materials

During the past fifteen years significant investment has been made for the applications of nanotechnology in almost every aspect of life. Almost every area of research has projected improvements including biotechnology, bioinspired electronic, optical and radiological sensors, or a promise for the emergence of some novel device technologies. For such applications major focus has been placed on research nanoparticles, nanotubes nanorods and two-dimensional structures similar to that of graphene. Some near- term applications of nano- particles and nanowires have produced very promising results for better synthesis of energy storage materials, design of biologically active composites like apatites, laser host crystals, photodetectors and sensor materials for radiation detection. To achieve desired morphologies, nanomaterials can be utilized some organic melt and orient the grains by the directional solidification method. The organic treated materials produce different characteristics than coarsened oxide materials. The focus is also understanding the morphology and performance function in human organs that occur because of aging or disease, and responses to interventions. We annealed to determine the changes in morphologies and hence effect of aging. In this presentation, we will discuss correlation between the designed composition, micromorphology and the performance parameters of nanomaterials. To understand the mechanism of formation of nanoparticles, nanoboloids, fibers experimental details and observations on the of multinary compounds will be presented. These observations on the transition of nanomorphology can highlight the mechanism of the phase transition in some oxides and selenides.

Singh, N. B.

Ionizing Organic Compound Based Nanocomposites for Efficient Gamma-Ray Sensor

Thin film and nanocrystalline materials of oxides have been very attractive choice as low cost option for gamma-ray detection and have shown great promise. Our studies on pure oxide films indicated that thickness and microstructure have pronounced effect on sensitivity. Since the interaction of gamma-ray with composites involves all three interaction processes; photoelectric effect, Compton scattering, and pair production, composites containing ionic organics have better chance for enhancing sensitivity. In the composites of ionizing organics oxidation effect of unusual oxides changes much faster and hence increases the sensitivity of radiation. In this study, we have used nickel oxide and titanium oxide in ionic organics to develop composite materials for low energy gamma-ray sensing. We prepared composites containing ethylene carbonate and evaluated the effect of commercial Cs-137 radiation source by studying current-voltage relationship at several frequencies. Radiated samples showed higher resistivity compared to as prepared composites.

Singh, N. B.

Low Temperature Flux Growth of 2H-SiC and Beta-Gallium Oxide

We present brief overview of our study on the low temperature flux growth of two very important novel wide bandgap materials 2H-SiC and Beta-gallium oxide (Beta-Ga2O3). We have synthesized and grown 5 millimeter to 1 centimeter size single crystals of Beta-gallium oxide (Beta-Ga2O3). We used a flux and semi wet method to grow transparent good quality crystals. In the semi-wet method Ga2O3 was synthesized with starting gallium nitrate solution and urea as a nucleation agent. In the flux method we used tin and other metallic flux. This crystal was placed in an alumina crucible and temperature was raised above 1050 degrees Centigrade. After a time period of thirty hours, we observed prismatic and needle shaped crystals of gallium oxide. Scanning electron microscopic studies showed step growth morphology. Crystal was polished to measure the properties. Bandgap was measured 4.7electronvolts using the optical absorption curve. Another wide bandgap hexagonal 2H-SiC was grown by using Si-Al eutectic flux in the graphite crucible. We used slight AlN also as the impurity in the flux. The temperature was raised up to 1050 degrees Centigrade and slowly cooled to 850 degrees Centigrade. Preliminary characterization results of this material are also reported.

Singh, N. B.