Engineering topics

Anthony, T. R.

Publications and source records attributed to Anthony, T. R..

3 records

NASA NTRS1981

Forming electrical interconnections through semiconductor wafers

An information processing system based on CMOS/SOS technology is being developed by NASA to process digital image data collected by satellites. An array of holes is laser drilled in a semiconductor wafer, and a conductor is formed in the holes to fabricate electrical interconnections through the wafers. Six techniques are used to form conductors in the silicon-on-sapphire (SOS) wafers, including capillary wetting, wedge extrusion, wire intersection, electroless plating, electroforming, double-sided sputtering and through-hole electroplating. The respective strengths and weaknesses of these techniques are discussed and compared, with double-sided sputtering and the through-hole plating method achieving best results. In addition, hollow conductors provided by the technique are available for solder refill, providing a natural way of forming an electrically connected stack of SOS wafers.

Anthony, T. R.↗

NASA NTRS1980

The reverse laser drilling of transparent materials

Within a limited range of incident laser-beam intensities, laser drilling of a sapphire wafer initiates on the surface of the wafer where the laser beam exits and proceeds upstream in the laser beam to the surface where the laser beam enters the wafer. This reverse laser drilling is the result of the constructive interference between the laser beam and its reflected component on the exit face of the wafer. Constructive interference occurs only at the exit face of the sapphire wafer because the internally reflected laser beam suffers no phase change there. A model describing reverse laser drilling predicts the ranges of incident laser-beam intensity where no drilling, reverse laser drilling, and forward laser drilling can be expected in various materials. The application of reverse laser drilling in fabricating feed-through conductors in silicon-on-sapphire wafers for a massively parallel processer is described.

Anthony, T. R.↗

NASA NTRS1980

The random walk of a drilling laser beam

The disregistry of holes drilled with a pulse laser beam in 330-micron-thick single-crystal silicon-on-sapphire wafers is examined. The exit positions of the holes were displaced from the hole entrance positions on the opposing face of the wafer, and this random displacement increased with the number of laser pulses required. A model in which the bottom of the drill hole experiences small random displacements during each laser pulse is used to describe the experimental observations. It is shown that the average random displacement caused by each pulse is only a few percent of the hole diameter and can be reduced by using as few laser pulses as necessary while avoiding the cracking and spalling of the wafer that occur with a hole drilled with a single pulse.

Anthony, T. R.↗