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Altoe, M. Virginia

Publications and source records attributed to Altoe, M. Virginia.

Continuous-wave upconverting nanoparticle microlasers

Reducing the size of lasers to microscale dimensions enables new technologies that are specifically tailored for operation in confined spaces ranging from ultra-high-speed microprocessors to live brain tissue. However, reduced cavity sizes increase optical losses and require greater input powers to reach lasing thresholds. Multiphoton-pumped lasers that have been miniaturized using nanomaterials such as lanthanide-doped upconverting nanoparticles (UCNPs) as lasing media require high pump intensities to achieve ultraviolet and visible emission and therefore operate under pulsed excitation schemes. Here, we make use of the recently described energy-looping excitation mechanism in Tm 3+ -doped UCNPs to achieve continuous-wave upconverted lasing action in stand-alone microcavities at excitation fluences as low as 14 kW cm -2 . Continuous-wave lasing is uninterrupted, maximizing signal and enabling modulation of optical interactions. By coupling energy-looping nanoparticles to whispering-gallery modes of polystyrene microspheres, we induce stable lasing for more than 5 h at blue and near-infrared wavelengths simultaneously. These microcavities are excited in the biologically transmissive second near-infrared (NIR-II) window and are small enough to be embedded in organisms, tissues or devices. The ability to produce continuous-wave lasing in microcavities immersed in blood serum highlights practical applications of these microscale lasers for sensing and illumination in complex biological environments.

47 OTHER INSTRUMENTATION↗

Functionalization of Scanning Probe Tips with Epitaxial Semiconductor Layers

Functionalized scanning probe tips hold great promise for the controlled delivery of signals from and to selected nanoscale volumes. Here, a new nanotechnological approach for the functionalization of scanning probe tips is presented, targeting the transfer of the optical, electrical, thermal, or chemical properties of precisely characterized epitaxial semiconductor layers to the nanoscale probe tip. Homogeneously doped, strain‐relaxed heteroepitaxial germanium layers, several micrometers thick, are first grown on silicon wafers by low‐energy plasma‐enhanced chemical vapor deposition and then employed to functionalize the probe apex. This choice of materials and growth technique enables the future scalability of the tip functionalization process toward high production volumes. The fabricated probe tips are investigated in a transmission electron microscope, revealing that the crystal structure and the homogeneous doping level of the epitaxial layers are unchanged after the probe‐tip functionalization process. These doped‐germanium tips are also tested as nanoemitters of light at telecom wavelengths (1.55 µm) and applied as scattering probes for near‐field mid‐infrared microscopy. The reported combination of heteroepitaxial growth and a nanofabrication approach can be extended to a variety of epitaxial materials, thus enabling a new generation of scanning probes for the investigation of nanostructured materials and devices.

Giliberti, Valeria↗