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Alterovitz, S. A.

Publications and source records attributed to Alterovitz, S. A..

At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

A new technique for oil backstreaming contamination measurements

Due to the large size and the number of diffusion pumps, space simulation chambers cannot be easily calibrated by the usual test dome method for measuring backstreaming from oil diffusion pumps. In addition, location dependent contamination may be an important parameter of the test. The backstreaming contamination was measured in the Space Power Facility (SPF) near Sandusky, OH, the largest space simulation vacuum test chamber in the U.S.. Small clean silicon wafers placed at all desired measurement sites were used as contamination sensors. The facility used diffusion pumps with DC 705 oil. The thickness of the contamination oil film was measured using ellipsometry. Since the oil did not wet the silicon substrate uniformly, two analysis models were developed to measure the oil film: (1) continuous, homogeneous film; and (2) islands of oil with the islands varying in coverage fraction and height. In both cases, the contamination film refractive index was assumed to be that of DC 705. The second model improved the ellipsometric analysis quality parameter by up to two orders of magnitude, especially for the low coverage cases. Comparison of the two models shows that the continuous film model overestimates the oil volume by less than 50 percent. Absolute numbers for backstreaming are in good agreement with published results for diffusion pumps. Good agreement was also found between the ellipsometric results and measurements done by x-ray photoelectron spectroscopy (XPS) and by scanning electron microscopy (SEM) on examples exposed to the same vacuum runs.

Alterovitz, S. A.↗
NASA NTRS1991

Magnetic flux relaxation in YBa2Cu3)(7-x) thin film: Thermal or athermal

The magnetic flux relaxation behavior of YBa2Cu3O(7-x) thin film on LaAlO3 for H is parallel to c was studied in the range 4.2 - 40 K and 0.2 - 1.0 T. Both the normalized flux relaxation rate S and the net flux pinning energy U increase continuously from 1.3 x 10(exp -2) to 3.0 x 10(exp -2) and from 70 to 240 meV respectively, as the temperature T increases from 10 to 40 K. This behavior is consistent with the thermally activated flux motion model. At low temperatures, however, S is found to decrease much more slowly as compared with kT, in contradiction to the thermal activation model. This behavior is discussed in terms of the athermal quantum tunneling of flux lines. The magnetic field dependence of U, however, is not completely understood.

Vitta, Satish↗
NASA NTRS1991

Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry

Variable-angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within the optical penetration depth of InGaAs-based modulation doped field effect transistor structures. Strained and unstrained InGaAs channels were made by molecular beam epitaxy (MBE) on InP substrates and by metal-organic chemical vapor deposition on GaAs substrates. In most cases, ellipsometrically determined thicknesses were within 10% of the growth-calibration results. The MBE-made InGaAs strained layers showed large strain effects, indicating a probable shift in the critical points of their dielectric function toward the InP lattice-matched concentration.

Alterovitz, S. A.↗
NASA NTRS1990

Low-temperature microwave characteristics of pseudomorphic In(x)Ga(1-x) As/In(0.52)Al(0.48)As modulation-doped field-effect transistors

Low-temperature microwave measurements of both lattice-matched and pseudomorphic In(x)Ga(1-x)As/In(0.48)As (x = 0.53, 0.60, and 0.70) channel MODFETs on InP substrates were carried out in a cryogenic measurement system. The measurements were done in the temperature range of 77 to 300 K and in the frequency range of 0.5 to 11.0 GHz at different bias conditions. The cutoff frequency (fT) for the In(x)Ga(1-x)As/In(0.52)Al(0.48)As MODFETs improved from 22 to 29 GHz, 29 to 38 GHz, and 39 to 51 GHz, for x = 0.53, 0.60, and 0.70, respectively, as the temperature was lowered from 300 to 77 K, which is approximately a 31 percent increase at each composition. No degradations were observed in device performance. These results indicate an excellent potential of the pseudomorphic devices at low temperatures.

Lai, R.↗
NASA NTRS1990

Ellipsometric study of YBa2Cu3O(7-x) laser ablated and co-evaporated films

High temperature superconducting films of YBa2Cu3O(7-x) (YBCO) were grown on SrTiO3, LaAl03, and YSZ substrates using two techniques: excimer laser ablation with in situ annealing and co-evaporation of Y, Cu, and BaF2 with ex-situ annealing. Film thicknesses were typically 5000 A, with predominant c-axis alignment perpendicular to the substrate. Critical temperatures up to Tc(R = 0) = 90 K were achieved by both techniques. Ellipsometric measurements were taken in the range 1.6 to 4.3 eV using a variable angle spectroscopic ellipsometer. The complex dielectric function of the laser ablated films was reproducible from run to run, and was found to be within 10 percent of that previously reported for (001) oriented single crystals. A dielectric overlayer was observed in these films, with an index of refraction of approximately 1.55 and nearly zero absorption. For the laser ablated films the optical properties were essentially independent of substrate material. The magnitude of the dielectric function obtained for the co-evaporated films was much lower than the value reported for single crystals, and was sample dependent.

Alterovitz, S. A.↗
NASA NTRS1990

Dielectric function of InGaAs in the visible

Measurements are reported of the dielectric function of thermodynamically stable In(x)Ga(1-x)As in the composition range 0.3 equal to or less than X = to or less than 0.7. The optically thick samples of InGaAs were made by molecular beam epitaxy (MBE) in the range 0.4 = to or less than X = to or less than 0.7 and by metal-organic chemical vapor deposition (MOCVD) for X = 0.3. The MBE made samples, usually 1 micron thick, were grown on semi-insulating InP and included a strain release structure. The MOCVD sample was grown on GaAs and was 2 microns thick. The dielectric functions were measured by variable angle spectroscopic ellipsometry in the range 1.55 to 4.4 eV. The data was analyzed assuming an optically thick InGaAs material with an oxide layer on top. The thickness of this layer was estimated by comparing the results for the InP lattice matched material, i.e., X = 0.53, with results published in the literature. The top oxide layer mathematically for X = 0.3 and X = 0.53 was removed to get the dielectric function of the bare InGaAs. In addition, the dielectric function of GaAs in vacuum, after a protective arsenic layer was removed. The dielectric functions for X = 0, 0.3, and 0.53 together with the X = 1 result from the literature to evaluate an algorithm for calculating the dielectric function of InGaAs for an arbitrary value of X (0 = to or less than X = to or less than 1) were used. Results of the dielectric function calculated using the algorithm were compared with experimental data.

Alterovitz, S. A.↗
NASA NTRS1990

Ellipsometric study of YBa2Cu3O(7-x) laser ablated and co-evaporated films

High temperature superconducting films of YBa2Cu3O(7-x) (YBCO were grown on SrTiO3, LaA1O3, and YSZ substrates using two techniques: excimer laser ablation with in situ annealing and co-evaporation of Y, Cu, and BaF2 with ex-situ annealing. Film thicknesses were typically 5000 A, with predominant c-axis alignment perpendicular to the substrate. Critical temperatures up to Tc(R=O)=90 K were achieved by both techniques. Ellipsometric measurements were taken in the range 1.6 to 4.3 eV using a variable angle spectroscopic ellipsometer. The complex dielectric function of the laser ablated films was reproducible from run to run, and was found to be within 10 percent of that previously reported for (001) oriented single crystals. A dielectric overlayer was observed in these films, with an index of refraction of approximately 1.55 and nearly zero absorption. For the laser ablated films the optical properties were essentially independent of substrate material. The magnitude of the dielectric function obtained for the co-evaported films was much lower than the value reported for single crystals, and was sample dependent.

Alterovitz, S. A.↗
NASA NTRS1990

Dielectric function of InGaAs in the visible

Measurements are reported of the dielectric function of thermodynamically stable In(x)Ga(1-x)As in the composition range 0.3 equal to or less than X = to or less than 0.7. The optically thick samples of InGaAs were made by molecular beam epitaxy (MBE) in the range 0.4 = to or less than X = to or less than 0.7 and by metal-organic chemical vapor deposition (MOCVD) for X = 0.3. The MBE made samples, usually 1 micron thick, were grown on semi-insulating InP and included a strain release structure. The MOCVD sample was grown on GaAs and was 2 microns thick. The dielectric functions were measured by variable angle spectroscopic ellipsometry in the range 1.55 to 4.4 eV. The data was analyzed assuming an optically thick InGaAs material with an oxide layer on top. The thickness of this layer was estimated by comparing the results for the InP lattice matched material, i.e., X = 0.53, with results published in the literature. The top oxide layer mathematically for X = 0.3 and X = 0.53 was removed to get the dielectric function of the bare InGaAs. In addition, the dielectric function of GaAs in vacuum, after a protective arsenic layer was removed. The dielectric functions for X = 0, 0.3, and 0.53 together with the X = 1 result from the literature to evaluate an algorithm for calculating the dielectric function of InGaAs for an arbitrary value of X(0 = to or less than X = to or less than 1) were used. Results of the dielectric function calculated using the algorithm were compared with experimental data.

Alterovitz, S. A.↗
NASA NTRS1990

Ellipsometric study of InGaAs MODFET material

In(x)Ga(1-x)As based MODFET (modulation doped field effect transistor) material was grown by molecular beam epitaxy on semi-insulating InP substrates. Several structures were made, including lattice matched and strained layer InGaAs. All structures also included several layers of In(0.52)Al(0.48)As. Variable angle spectroscopic ellipsometry was used to characterize the structures. The experimental data, together with the calibration function for the constituent materials, were analyzed to yield the thickness of all the layers of the MODFET structure. Results of the ellipsometrically determined thicknesses compare very well with the reflection high energy electron diffraction in situ thickness measurements.

Alterovitz, S. A.↗
NASA NTRS1990

Electrical transport measurements on polycrystalline superconducting Y-Ba-Cu-O films

The current-voltage, I-V, characteristics of polycrystalline Y-Ba-Cu-O films have been measured as a function of temperature. The I-V characteristics are interpreted using a model based upon an array of weak links with a statistical distribution of critical currents. In addition, evidence is found that the supercurrents flow in nearly independent filaments near Tc. Various criteria are discussed with respect to the definition of the transport critical current, Ic, in these films. A temperature dependence for Ic has also been deduced from the I-V data by appealing to an empirical scaling law. It is proposed that this temperature dependence is representative of the weaker links within the critical current distribution.

Stan, M. A.↗
NASA NTRS1989

Adhesion, friction, and wear of plasma-deposited thin silicon nitride films at temperatures to 700 C

The adhesion, friction, and wear behavior of silicon nitride films deposited by low- and high-frequency plasmas (30 kHz and 13.56 MHz) at various temperatures to 700 C in vacuum were examined. The results of the investigation indicated that the Si/N ratios were much greater for the films deposited at 13.56 MHz than for those deposited at 30 kHz. Amorphous silicon was present in both low- and high-frequency plasma-deposited silicon nitride films. However, more amorphous silicon occurred in the films deposited at 13.56 MHz than in those deposited at 30 kHz. Temperature significantly influenced adhesion, friction, and wear of the silicon nitride films. Wear occurred in the contact area at high temperature. The wear correlated with the increase in adhesion and friction for the low- and high-frequency plasma-deposited films above 600 and 500 C, respectively. The low- and high-frequency plasma-deposited thin silicon nitride films exhibited a capability for lubrication (low adhesion and friction) in vacuum at temperatures to 500 and 400 C, respectively.

Miyoshi, K.↗
NASA NTRS1989

Plasma-deposited amorphous hydrogenated carbon films and their tribological properties

Recent work on the properties of diamondlike carbon films and their dependence on preparation conditions are reviewed. The results of the study indicate that plasma deposition enables one to deposit a variety of amorphous hydrogenated carbon (a-C:H) films exhibiting more diamondlike behavior to more graphitic behavior. The plasma-deposited a-C:H can be effectively used as hard, wear-resistant, and protective lubricating films on ceramic materials such as Si(sub 3)N(sub 4) under a variety of environmental conditions such as moist air, dry nitrogen, and vacuum.

Miyoshi, K.↗
NASA NTRS1988

Adhesion, friction, and wear of plasma-deposited thin silicon nitride films at temperatures to 700 C

The adhesion, friction, and wear behavior of silicon nitride films deposited by low- and high-frequency plasmas (30 kHz and 13.56 MHz) at various temperatures to 700 C in vacuum were examined. The results of the investigation indicated that the Si/N ratios were much greater for the films deposited at 13.56 MHz than for those deposited at 30 kHz. Amorphous silicon was present in both low- and high-frequency plasma-deposited silicon nitride films. However, more amorphous silicon occurred in the films deposited at 13.56 MHz than in those deposited at 30 kHz. Temperature significantly influenced adhesion, friction, and wear of the silicon nitride films. Wear occurred in the contact area at high temperature. The wear correlated with the increase in adhesion and friction for the low- and high-frequency plasma-deposited films above 600 and 500 C, respectively. The low- and high-frequency plasma-deposited thin silicon nitride films exhibited a capability for lubrication (low adhesion and friction) in vacuum at temperatures to 500 and 400 C, respectively.

Miyoshi, K.↗
NASA NTRS1988

Shubnikov-de Haas measurements of the 2-D electron gas in pseudomorphic In(0.1)Ga(0.9)As grown on GaAs

Shubnikov-de Hass (SdH) measurements performed on a 200 A layer of pseudomorphic In(0.10)Ga(0.90)As grown by MBE on undoped GaAs with an overlayer of Al(0.15)Ga(0.85)As are presented. These measurements were performed in magnetic fields up to 1.4 tesla at T in the range of 1.4-10 K. It was found that only one subband was populated with a density of 5.8 x 10 to the 11/cm-squared and an effective mass at the Fermi level m(asterisk) = (0.060 + or - 0.001)m(0).

Szydlic, P. P.↗
NASA NTRS1987

Adhesion, friction and deformation of ion-beam-deposited boron nitride films

The tribological properties and mechanical strength of boron nitride films were investigated. The BN films were predominantly amorphous and nonstoichiometric and contained small amounts of oxides and carbides. It was found that the yield pressure at full plasticity, the critical load to fracture, and the shear strength of interfacial adhesive bonds (considered as adhesion) depended on the type of metallic substrate on which the BN was deposited. The harder the substrate, the greater the critical load and the adhesion. The yield pressures of the BN film were 12 GPa for the 440C stainless steel substrate, 4.1 GPa for the 304 stainless steel substrate, and 3.3 GPa for the titanium substrate.

Miyoshi, K.↗
NASA NTRS1987

Weak-field magnetization of superconducting Y1Ba2Cu3O(x) - Relationship to microstructure

The granular magnetization model of Finnemore et al. (1987) has been tested on a well-characterized sample of Y1Ba2Cu3Ox. The temperature dependence of the magnetic susceptibility is in excellent agreement with the model. In addition, the grain size deduced from the magnetization data (1-2 microns) is in reasonable agreement with direct scanning-electron-microscopy measurements of the microstructure.

Farrell, D. E.↗
NASA NTRS1986

Ellipsometric and optical study of amorphous hydrogenated carbon films

A low-frequency plasma deposition system was used to prepare amorphous hydrogenated carbon (a-C:H) films. The growth energy was varied by changing the power and/or pressure of the plasma. Ellipsometry and optical absorption were used to obtain the optical energy gap, the density of states, and the refractive index. Ion sputtering was used in conjunction with ellipsometry and Auger electron spectroscopy to get absolute sputtering rates. The plasma deposited a-C:H is amorphous with an optical energy gap of approximately 2.0-2.4 eV. These a-C:H films have higher density and/or hardness, higher refractive index, and lower optical energy gaps with increasing energy of the particles in the plasma, while the density of states remains unchanged. These results are in agreement with, and give a fine-tuned positive confirmation to, an existing conjecture on the nature of the a-C:H films (Kaplan et al., 1985).

Alterovitz, S. A.↗