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Alfano, R. R.

Publications and source records attributed to Alfano, R. R..

At least 19 records

Detection of Objects Hidden in Highly Scattering Media Using Time-Gated Imaging Methods

Non-intrusive and non-invasive optical imaging techniques has generated great interest among researchers for their potential applications to biological study, device characterization, surface defect detection, and jet fuel dynamics. Non-linear optical parametric amplification gate (NLOPG) has been used to detect back-scattered images of objects hidden in diluted Intralipid solutions. To directly detect objects hidden in highly scattering media, the diffusive component of light needs to be sorted out from early arrived ballistic and snake photons. In an optical imaging system, images are collected in transmission or back-scattered geometry. The early arrival photons in the transmission approach, always carry the direct information of the hidden object embedded in the turbid medium. In the back-scattered approach, the result is not so forth coming. In the presence of a scattering host, the first arrival photons in back-scattered approach will be directly photons from the host material. In the presentation, NLOPG was applied to acquire time resolved back-scattered images under the phase matching condition. A time-gated amplified signal was obtained through this NLOPG process. The system's gain was approximately 100 times. The time-gate was achieved through phase matching condition where only coherent photons retain their phase. As a result, the diffusive photons, which were the primary contributor to the background, were removed. With a large dynamic range and high resolution, time-gated early light imaging has the potential for improving rocket/aircraft design by determining jets shape and particle sizes. Refinements to these techniques may enable drop size measurements in the highly scattering, optically dense region of multi-element rocket injectors. These types of measurements should greatly enhance the design of stable, and higher performing rocket engines.

Galland, Pierre A.

Optical Imaging of Flow Pattern and Phantom

Time-resolved optical imaging technique has been used to image the spatial distribution of small droplets and jet sprays in a highly scattering environment. The snake and ballistic components of the transmitted pulse are less scattered, and contain direct information about the sample to facilitate image formation as opposed to the diffusive components which are due to multiple collisions as a light pulse propagates through a scattering medium. In a time-gated imaging scheme, these early-arriving, image-bearing components of the incident pulse are selected by opening a gate for an ultrashort period of time and a shadowgram image is detected. Using a single shot cooled CCD camera system, the formation of water droplets is monitored as a function of time. Picosecond time-gated image of drop in scattering cells, spray droplets as a function of let speed and gas pressure, and model calcification samples consisted of calcium carbonate particles of irregular shapes ranging in size from 0. 1 to 1.5 mm affixed to a microscope slide have been measured. Formation produced by an impinging jet will be further monitored using a CCD with 1 kHz framing illuminated with pulsed light. The desired image resolution of the fuel droplets is on the 20 pm scale using early light through a highly scattering medium. A 10(exp -6)m displacement from a jet spray with a flow speed of 100 m/sec introduced by the ns grating pulse used in the imaging is negligible. Early ballistic/snake light imaging offers nondestructive and noninvasive method to observe the spatial distribution of hidden objects inside a highly scattering environment for space, biomedical, and materials applications. In this paper, the techniques we will present are time-resolved K-F transillumination imaging and time-gated scattered light imaging. With a large dynamic range and high resolution, time-gated early light imaging has the potential for improving rocket/aircraft design by determining jets shape and particle sizes. Refinements to these techniques may enable drop size measurements in the highly scattering, optically dense region of multi-element rocket injectors. These types of measurements should greatly enhance the design of stable, and higher performing rocket engines.

Galland, Pierre A.

Investigation of Photoluminescence and Photocurrent in InGaAsP/InP Strained Multiple Quantum Well Heterostructures

Multiple quantum well InGaAsP/InP p-i-n laser heterostructures with different barrier thicknesses have been investigated using photoluminescence (PL) and photocurrent (PC) measurements. The observed PL spectrum and peak positions are in good agreement with those obtained from transfer matrix calculations. Comparing the measured quantum well PC with calculated carrier escape rates, the photocurrent changes are found to be governed by the temperature dependence of the electron escape time.

Raisky, O. Y.

Temperature Dependence of Photoluminescence in InGaAs/InP Strained MQW Heterostructures

Multiple quantum well (MQW) InGaAsP/InP heterostructure systems have been drawn considerable research interest in recent years due to its suitability for long wavelength optoelectronic devices. The performance of such devices is strongly affected by peculiarities of recombination processes in the quantum wells (QW). The goal of this study was to investigate the effect of barrier width on the radiative recombination of carriers. In our study, the photoluminescence spectra from InGaAsP/lnP MQW double heterostructures have been measured in the 77-290 K temperature range with different excitation intensities.

Raisky, O. Y.

Hot Carrier Dynamics in the X Valley in Si and Ge Measured by Pump-IR-Probe Absorption Spectroscopy

Si is the semiconductor of choice for nanoelectronic roadmap into the next century for computer and other nanodevices. With growing interest in Si, Ge, and Si(sub m)Ge(sub n) strained superlattices, knowledge of the carrier relaxation processes in these materials and structures has become increasingly important. The limited time resolution for earlier studies of carrier dynamics in Ge and Si, performed using Nd:glass lasers, was not sufficient to observe the fast cooling processes. In this paper, we present a direct measurement of hot carrier dynamics in the satellite X valley in Si and Ge by time-resolved infrared(IR) absorption spectroscopy, and show the potential of our technique to identify whether the X valley is the lowest conduction valley in semiconductor materials and structures.

Wang, W. B.

Investigation of the basic physics of high efficiency semiconductor hot carrier solar cell

The main purpose of this research program is to investigate potential semiconductor materials and their multi-band-gap MQW (multiple quantum wells) structures for high efficiency solar cells for aerospace and commercial applications. The absorption and PL (photoluminescence) spectra, the carrier dynamics, and band structures have been investigated for semiconductors of InP, GaP, GaInP, and InGaAsP/InP MQW structures, and for semiconductors of GaAs and AlGaAs by previous measurements. The barrier potential design criteria for achieving maximum energy conversion efficiency, and the resonant tunneling time as a function of barrier width in high efficiency MQW solar cell structures have also been investigated in the first two years. Based on previous carrier dynamics measurements and the time-dependent short circuit current density calculations, an InAs/InGaAs - InGaAs/GaAs - GaAs/AlGaAs MQW solar cell structure with 15 bandgaps has been designed. The absorption and PL spectra in InGaAsP/InP bulk and MQW structures were measured at room temperature and 77 K with different pump wavelength and intensity, to search for resonant states that may affect the solar cell activities. Time-resolved IR absorption for InGaAsP/InP bulk and MQW structures has been measured by femtosecond visible-pump and IR-probe absorption spectroscopy. This, with the absorption and PL measurements, will be helpful to understand the basic physics and device performance in multi-bandgap InAs/InGaAs - InGaAs/InP - InP/InGaP MQW solar cells. In particular, the lifetime of the photoexcited hot electrons is an important parameter for the device operation of InGaAsP/InP MQW solar cells working in the resonant tunneling conditions. Lastly, time evolution of the hot electron relaxation in GaAs has been measured in the temperature range of 4 K through 288 K using femtosecond pump-IR-probe absorption technique. The temperature dependence of the hot electron relaxation time in the X valley has been measured.

Alfano, R. R.

Time-Resolved IR-Absorption Spectroscopy of Hot-Electron Dynamics in Satellite and Upper Conduction Bands in GaP

The relaxation dynamics of hot electrons in the X6 and X7 satellite and upper conduction bands in GaP was directly measured by femtosecond UV-pump-IR-probe absorption spectroscopy. From a fit to the induced IR-absorption spectra the dominant scattering mechanism giving rise to the absorption at early delay times was determined to be intervalley scattering of electrons out of the X7 upper conduction-band valley. For long delay times the dominant scattering mechanism is electron-hole scattering. Electron transport dynamics of the upper conduction band of GaP has been time resolved.

Cavicchia, M. A.

Picosecond imaging of sprays

Preliminary results from applying a Kerr-Fourier imaging system to a water/air spray produced by a shear coaxial element are presented. The physics behind ultrafast time-gated optical techniques is discussed briefly. A typical setup of a Kerr-Fourier time gating system is presented.

Breisacher, Kevin

Barrier potential design criteria in multiple-quantum-well-based solar-cell structures

The barrier potential design criteria in multiple-quantum-well (MQW)-based solar-cell structures is reported for the purpose of achieving maximum efficiency. The time-dependent short-circuit current density at the collector side of various MQW solar-cell structures under resonant condition was numerically calculated using the time-dependent Schroedinger equation. The energy efficiency of solar cells based on the InAs/Ga(y)In(1-y)As and GaAs/Al(x)Ga(1-x)As MQW structues were compared when carriers are excited at a particular solar-energy band. Using InAs/Ga(y)In(1-y)As MQW structures it is found that a maximum energy efficiency can be achieved if the structure is designed with barrier potential of about 450 meV. The efficiency is found to decline linearly as the barrier potential increases for GaAs/Al(x)Ga(1-x)As MQW-structure-based solar cells.

Mohaidat, Jihad M.

Self-mode-locked chromium-doped forsterite laser generates 50-fs pulses

Stable transform-limited (delta nu-delta tau = 0.32) femtosecond pulses with a FWHM of 50 fs were generated from a self-mode-locked chromium-doped forsterite laser. The forsterite laser was synchronously pumped by a CW mode-locked Nd:YAG (82 MHz) laser that generated picosecond pulses (200-300 ps) and provided the starting mechanism for self-mode-locked operation. Maximum output power was 45 mW for 3.9 W of absorbed pumped power with the use of an output coupler with 1 percent transmission. The self-mode-locked forsterite laser was tuned from 1240 to 1270 nm.

Seas, A.

Femtosecond pulses generated from a synchronously pumped chromium-doped forsterite laser

Kerr lens mode-locking (KLM) has become a standard method to produce femtosecond pulses from tunable solid state lasers. High power inside the laser resonator propagating through the laser-medium with nonlinear index of refraction, coupled with the stability conditions of the laser modes in the resonator, result in a passive amplitude modulation which explains the mechanism for pulse shortening. Recently, chromium doped forsterite was shown to exhibit similar pulse behavior. A successful attempt to generate femtosecond pulses from a synchronously pumped chromium-doped forsterite laser with intracavity dispersion compensation is reported. Stable, transform limited pulses with duration of 105 fs were routinely generated, tunable between 1240 to 1270 nm.

Seas, A.

Generation of sub-100-fs pulses from a CW mode-locked chromium-doped forsterite laser

Generation of femtosecond pulses from a continuous-wave mode-locked chromium-doped forsterite laser is reported. The forsterite laser was actively mode locked by using an acoustooptic modulator operating at 78 MHz with two Brewster high-dispersion glass prisms for intracavity chirp compensation. Transform-limited sub-100-fs pulses were routinely generated in the TEM(00) mode with 85 mW of continuous power (with 1 percent output coupler), tunable over 1230-1280 nm. The shortest pulses measured had a 60-fs pulse width.

Seas, A.

Novel Cr(4+)-based tunable solid-state lasers

Spectroscopic and laser properties of chromium-doped forsterite (Cr:Mg2SiO4) are reviewed and future directions in development of other Cr(4+)-doped tunable solid-state lasers are discussed. The unique property of chromium-doped forsterite is that the lasing center was identified as tetravalent chromium (Cr(4+)) substituting for tetrahedrally coordinated Si(4+). Development of chromium-doped forsterite laser may stimulate the generation of a new class of tunable solid state lasers based on tetravalent chromium as a laser active ion for the near-IR eyesafe spectral range. The criteria for the development of new Cr(4+)-based tunable solid-state laser crystals are discussed. We also present current research efforts to identify potential low field host crystals, such as silicates, titanites, and germanates, that may be doped with Cr(4+) as an active ion. These new laser materials are expected to cover the wavelength region from 1 - 2 microns, which may be of great technological importance.

Petricevic, V.

Temperature dependence of the transient photoconductive response in stretched trans-polyacetylene films with below-gap excitation

The temperature dependence of the picosecond photocurrent with below-gap excitation (1.06 microns) has been measured for a highly oriented form of transpolyacetylene. The one-dimensional picosecond photocurrent is independent of temperature. The three-dimensional picosecond photocurrent is temperature dependent with an activation energy of 63 meV. These results demonstrate the photoproduction of nonlinear charged carriers (solitons and polarons) at energies that are below the principal interband absorption edge.

Walser, A. D.

Effective gain measurements in chromium-doped forsterite

Effective gain cross section in tetravalent chromium-doped forsterite laser crystal was measured over the 1180-1330 nm spectral range. The experiment was performed using two collinear laser beams in a pump-and-probe arrangement. The peak-gain cross section from this measurement is estimated to be 1.9 x 10 to the -19th sq cm at 1215 nm, which is comparable to the value of about 2 x 10 to the -19th sq cm predicted by fluorescence linewidth and lifetime measurements. These results indicate that excited-state absorption is not a major loss mechanism in tetravalent chromium-doped forsterite.

Petricevic, V.

Nonradiative relaxation and laser action in tunable solid state laser crystals

Room-temperature pulsed laser action was obtained in chromium-activated forsterite (Cr:Mg2SiO4) for both 532 and 1064 nm pumping. Free running laser emission in both cases is centered at 1235 nm and has a bandwidth of approximately 30 nm. Slope efficiency as high as 22 percent was measured. Using different sets of output mirrors and a single birefrigent plate as the intracavity wavelength selecting element tunability over the 1167 to 1268 nm spectral range was demonstrated. Continuous wave laser operation at room temperature was obtained for 1064 nm pumping from a CW Nd:YAG laser. The output power slope efficiency is 6.8 percent. The gain cross section is estimated to be 1.1 x 10 to the 19th sq cm. Spectroscopic studies suggest that the laser action is due to a center other than the trivalent chromium (Cr 3+), presumably the tetravalent chromium (Cr 4+) in a tetrahedrally coordinated site.

Petricevic, V.

Transient photoconductivity in the ferromagnetic semiconductor CdCr2Se4

The transient photoconductive response time of the ferromagnetic semiconductor CdCr2Se4 was measured to be smaller than 90 ps, the response time of the scope. The measurements were performed at room temperature (300 K) for 0.53 and 1.06 microns excitations using a mode locked frequency-doubled YAG laser.

Walser, A. D.

Laser action in chromium-activated forsterite for near infrared excitation

This paper reports on laser action in chromium-doped forsterite (Cr:Mg2SiO4) for 1064-nm excitation of the crystal's double-hump absorption band spanning the 850-1200-nm wavelength range. The cavity arrangement used for obtaining laser action in Cr:Mg2SiO2 was similar to that described by Petricevic et al. (1988). The fundamental and second harmonic emissions from a Q-switched Nd:YAG laser operating at a 10-Hz repetition rate were used for excitation of the NIR and visible bands, respectively. Pulsed laser action was readily observed for both the 1064-nm and 532-nm pumping at or above the respective thresholds. The laser parameters of the 532-nm and 1064-nm excitations were similar, indicating that the IR band is responsible for laser action for both excitations.

Petricevic, V.