Engineering topics
Ailihumaer, Tuerxun
Publications and source records attributed to Ailihumaer, Tuerxun.
Dislocation contrast on X-ray topographs under weak diffraction conditions
The contrast of dislocations in 4H-SiC crystals shows distinctive features on grazing-incidence X-ray topographs for diffraction at different positions on the operative rocking curve. Ray-tracing simulations have previously been successfully applied to describe the dislocation contrast at the peak of a rocking curve.The present work shows that the dislocation images observed under weak diffraction conditions can also be simulated using the ray-tracing method. Furthermore, these simulations indicate that the contrast of the dislocations is dominated by orientation contrast. Analysis of the effective misorientation reveals that the dislocation contrast in weak-beam topography is more sensitive to the local lattice distortion, consequently enabling information to be obtained on the dislocation sense which cannot be obtained from the peak.
Characterization of Dislocations in 6H-SiC Wafer Through X-Ray Topography and Ray-Tracing Simulation
Explore the source record for details and available documents.
Influence of surface relaxation on the contrast of threading edge dislocations in synchrotron X-ray
Explore the source record for details and available documents.
Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H
Explore the source record for details and available documents.
Characterization of Hazy Morphology on AlInP/GaAs Epitaxial Wafers Grown by Organometallic Vapor-Pha
Explore the source record for details and available documents.
X-ray Topography Characterization of GaN Substrates Used for Power Electronic Devices
Explore the source record for details and available documents.
Prismatic Slip in AlN Crystals Grown By PVT
Explore the source record for details and available documents.
Characterization of 4H-SiC Lattice Damage After Novel High Energy Ion Implantation
Explore the source record for details and available documents.
Synchrotron X-ray topography characterization of high quality ammonothermal-grown gallium nitride substrates
Abstract not provided
Characterization of Hazy Morphology on AlInP/GaAs Epitaxial Wafers Grown by Organometallic Vapor Phase Epitaxy
Abstract not provided
Synchrotron X-ray Topography Characterization of Commercial GaN Substrates for Power Electronic Applications
Abstract not provided
Characterization of Dislocations in 4H-SiC Single Crystals at the Initial Growth Stage by Synchrotron X-ray Topography
Abstract not provided
Analysis of Dislocations in PVT-Grown 6H-SiC through Grazing-Incidence X-Ray Topographic Images and Ray-Tracing Simulation
Abstract not provided