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Aguiar, Jeffery A.

Publications and source records attributed to Aguiar, Jeffery A..

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Hyperdimensional scanning transmission electron microscopy and examinations and related systems, methods, and devices

A material identification system includes one or more data interfaces configured to receive first sensor data generated by a first sensor responsive to a material sample, and receive second sensor data generated by a second sensor responsive to the material sample. The material identification system also includes one or more processors configured to generate a set of predictions of an identification of the material sample and a corresponding set of certainty information.

Aguiar, Jeffery A.↗
DOE OSTI2023

Nanoprecipitates to Enhance Radiation Tolerance in High-Entropy Alloys

The growth of advanced energy technologies for power generation is enabled by the design, development, and integration of structural materials that can withstand extreme environments, such as high temperatures, radiation damage, and corrosion. High-entropy alloys (HEAs) are a class of structural materials in which suitable chemical elements in four or more numbers are mixed to typically produce single-phase concentrated solid solution alloys (CSAs). Many of these alloys exhibit good radiation tolerance like limited void swelling and hardening up to relatively medium radiation doses (tens of displacements per atom (dpa)); however, at higher radiation damage levels (>50 dpa), some HEAs suffer from considerable void swelling limiting their near-term acceptance for advanced nuclear reactor concepts. In this study, we developed a HEA containing a high density of Cu-rich nanoprecipitates distributed in the HEA matrix. The Cu-added HEA, NiCoFeCrCu 0.12 , shows excellent void swelling resistance and negligible radiation-induced hardening upon irradiation up to high radiation doses (i.e., higher than 100 dpa). The void swelling resistance of the alloy is measured to be significantly better than NiCoFeCr CSA and austenitic stainless steels. Density functional theory simulations predict lower vacancy and interstitial formation energies at the coherent interfaces between Cu-rich nanoprecipitates and the HEA matrix. The alloy maintained a high sink strength achieved via nanoprecipitates and the coherent interface with the matrix at a high radiation dose (~50 dpa). From our experiments and simulations, the effective recombination of radiation-produced vacancies and interstitials at the coherent interfaces of the nanoprecipitates is suggested to be the critical mechanism responsible for the radiation tolerance of the alloy. Furthermore, the materials design strategy based on incorporating a high density of interfaces can be applied to high-entropy alloy systems to improve their radiation tolerance.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Decoding Early Candidacy of High Entropy Alloys for Nuclear Application using the Advanced Test Reactor through Predictive Methods and Combinatorial Testing

High Entropy Alloys (HEAs) are identified candidates for nuclear applications owing to their superb mechanical and thermal properties. In line with evaluating their candidacy, a challenge remains in their validity as structural replacements for extreme environments. Each compositional graded specimen consists up to four different compositions spanning the fueled zone for non-prototypical neutron irradiation testing in the Advanced Test Reactor (ATR) at Idaho National Laboratory (INL). We have fabricated a set of four compositionally graded specimens using spark plasma sintering that include at least five of the following elements: Cr, C, Al, Zr, Mo, Nb, Ta, V, Ti, W, and Fe. In time for this meeting the role of temperature expected to play a role in-pile cladding chemical interactions (FCCI), mechanical interactions (FCMI), irradiation damage, creep, and resistance will be reported. The irradiated portion has a scheduled irradiation date in April 2020 and with post irradiation examination (PIE) to follow.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2020

Tuning Internal Strain in Metal–Organic Frameworks via Vapor Phase Infiltration for CO 2 Reduction

Abstract A gas‐phase approach to form Zn coordination sites on metal–organic frameworks (MOFs) by vapor‐phase infiltration (VPI) was developed. Compared to Zn sites synthesized by the solution‐phase method, VPI samples revealed approximately 2.8 % internal strain. Faradaic efficiency towards conversion of CO 2 to CO was enhanced by up to a factor of four, and the initial potential was positively shifted by 200–300 mV. Using element‐specific X‐ray absorption spectroscopy, the local coordination environment of the Zn center was determined to have square‐pyramidal geometry with four Zn−N bonds in the equatorial plane and one Zn‐OH 2 bond in the axial plane. The fine‐tuned internal strain was further supported by monitoring changes in XRD and UV/Visible absorption spectra across a range of infiltration cycles. The ability to use internal strain to increase catalytic activity of MOFs suggests that applying this strategy will enhance intrinsic catalytic capabilities of a variety of porous materials.

Yang, Fan↗
DOE OSTI2020

Cadmium Selective Etching in CdTe Solar Cells Produces Detrimental Narrow-Gap Te in Grain Boundaries

Recent advances in design and processing technology have made possible commercialization of polycrystalline (px)-CdTe as a photovoltaic absorber. Grain boundaries (GBs) are the most prominent structural defects in these devices and undergo significant changes during device fabrication. However, the effects of device fabrication processes on these GBs are not entirely understood. Prevailing models of GBs in thin-film photovoltaics consider individual GBs to have homogeneous properties in their area. Here, using an aberration-corrected scanning transmission electron microscope (STEM)-based low-loss and core-loss electron energy-loss spectroscopy (EELS), we show that back-surface etching of CdTe leads to inhomogeneity within individual grain boundaries. We observe that etching the back surface leads to the conversion of a region of GBs from CdTe to an elemental Te, which has an only 0.33 eV band gap, as deep as 1 μm from the back surface. The presence of elemental Te in GBs this deep into the absorber layer will increase recombination in the absorber layer and limit the extractable open-circuit voltage, thus reducing device efficiency. However, additive methods for back contact formation such as deposition of Te, ZnTe, or other materials preserve the CdTe stoichiometry of the GBs. Thus, especially for the next generations of CdTe-based cells having longer minority carrier diffusion length and/or thinner absorber layers, additive back contacting methods are superior.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Observation and Implications of Composition Inhomogeneity Along Grain Boundaries in Thin Film Polycrystalline CdTe Photovoltaic Devices

Abstract Leading photovoltaic technologies such as multicrystalline Si, CdTe, Cu(In,Ga)Se 2 , and lead halide perovskites are polycrystalline, yet achieve relatively high performance. At the moment polycrystalline photovoltaic technologies stand at a juncture where further advances in device performance and reliability necessitate additional characterization and modeling to include nanoscale property variations. Properties and implications of grain boundaries are previously studied, yet chemistry variations along individual grain boundaries and its implications are not yet fully explored. Here, the effects of bromine etching of CdTe absorber layers on the nanoscale chemistry are reported. Bromine etching is commonly used for improving CdTe back contacts, yet it removes both cadmium and chlorine along grain boundaries to depths closer to 1 µm. 2D device simulations reveal these composition modifications limit photovoltaic performance. Since grain boundaries and their intersections with surfaces and interfaces are universal to thin film photovoltaics, these findings call for similar studies in each of the photovoltaic technologies to further enable advances.

Misra, Sudhajit↗
DOE OSTI2019

Water‐Assisted Liftoff of Polycrystalline CdS/CdTe Thin Films Using Heterogeneous Interfacial Engineering

Abstract Recent advances in device design and process optimizations have enabled the production of CdTe devices on flexible substrates, but the necessary high‐temperature processing (>450 °C) to recrystallize grains limits the use of alternative lightweight substrates. Here, a new synthesis method is reported to create a freestanding CdS/CdTe film by combining high‐temperature depositions (CdS/CdTe on Si/SiO 2 ) and a simple lift‐off process in a water environment at room temperature. Analysis of the results indicate that the delamination is facilitated by the innate lattice mismatch as well as the presence of an unexpected Te‐rich layer (≈20 nm), which accumulates on the SiO 2 surface. High‐resolution electron microscopy and spectroscopy measurements confirm that the CdS/CdTe film is physically liberated from the substrate without leaving any residue, while also preserving their initial structural and compositional properties.

Magginetti, David J.↗
DOE OSTI2019

Dual Protection Layer Strategy to Increase Photoelectrode–Catalyst Interfacial Stability: A Case Study on Black Silicon Photoelectrodes

Abstract Photoelectrode degradation under harsh solution conditions continues to be a major hurdle for long‐term operation and large‐scale implementation of solar fuel conversion. In this study, a dual‐layer TiO 2 protection strategy is presented to improve the interfacial durability between nanoporous black silicon and photocatalysts. Nanoporous silicon photocathodes decorated with catalysts are passivated twice, providing an intermediate TiO 2 layer between the substrate and catalyst and an additional TiO 2 layer on top of the catalysts. Atomic layer deposition of TiO 2 ensures uniform coverage of both the nanoporous silicon substrate and the catalysts. After 24 h of electrolysis at pH = 0.3, unprotected photocathodes layered with platinum and molybdenum sulfide retain only 30% and 20% of their photocurrent, respectively. At the same pH, photocathodes layered with TiO 2 experience an increase in photocurrent retention: 85% for platinum‐coated photocathodes and 91% for molybdenum sulfide–coated photocathodes. Under alkaline conditions, unprotected photocathodes experience a 95% loss in photocurrent within the first 4 h of electrolysis. In contrast, TiO 2 ‐protected photocathodes maintain 70% of their photocurrent during 12 h of electrolysis. This approach is quite general and may be employed as a protection strategy for a variety of photoabsorber–catalyst interfaces under both acidic and basic electrolyte conditions.

Yang, Fan↗
DOE OSTI2019

Unbiased solar H 2 production with current density up to 23 mA cm -2 by Swiss-cheese black Si coupled with wastewater bioanode

Unbiased photoelectrochemical hydrogen production with high efficiency and durability is highly desired for solar energy storage. Here, we report a microbial photoelectrochemical (MPEC) system that demonstrated superior performance when equipped with bioanodes and black silicon photocathode with a unique “Swiss-cheese” interface. The MPEC utilizes the chemical energy embedded in wastewater organics to boost solar H 2 production, which overcomes barriers on anode H 2 O oxidation. Without any bias, the MPEC generates a record photocurrent (up to 23 mA cm -2 ) and retains prolonged stability for over 90 hours with high Faradaic efficiency (96–99%). The calculated turnover number for MoS x catalyst during a 90 h period is 495 471 with an average frequency of 1.53 s -1 . The system replaced pure water on the anode with actual wastewater and achieved waste organic removal up to 16 kg COD m -2 photocathode per day. Cost credits from concurrent wastewater treatment and low-cost design make photoelectrochemical H 2 production practical for the first time.

08 HYDROGEN↗
DOE OSTI2017

In situ investigation of halide incorporation into perovskite solar cells

We report on the material chemistry following crystallization in the presence of water vapor of chlorinated formamidinium lead-triiodide (NH 2 CH = NH 2 PbI 3-x Cl x ) perovskite films. We found in-situ exposure to water vapor reduces, or possibly eliminates, the retention of chlorine (Cl) inside NH 2 CH = NH 2 PbI 3-x Cl x crystals. There is a strong tendency toward Cl volatility, which indicates the sensitivity of these materials for their integration into solar cells. The requisite for additional efforts focused on the mitigation of water vapor is reported. Based on the in situ results, hot casting (<100°C) in dry conditions demonstrates improved film coverage and Cl retention with efficiencies reaching 12.07%.

14 SOLAR ENERGY↗
DOE OSTI2017

A graded catalytic–protective layer for an efficient and stable water-splitting photocathode

Achieving solar-to-hydrogen efficiencies above 15% is key for the commercial success of photoelectrochemical water splitting devices. While tandem cells can reach those efficiencies, increasing the catalytic activity and long-term stability remains a significant challenge. We show that annealing a bilayer of amorphous titanium dioxide (TiO x ) and molybdenum sulfide (MoS x ) deposited onto GaInP 2 results in a photocathode with high catalytic activity (current density of 11 mA/cm -2 at 0 V vs. the reversible hydrogen electrode under 1 sun illumination) and stability (retention of 80% of initial photocurrent density over a 20 h durability test) for the hydrogen evolution reaction. Microscopy and spectroscopy reveal that annealing results in a graded MoS x /MoO x /TiO 2 layer that retains much of the high catalytic activity of amorphous MoS x but with stability similar to crystalline MoS 2 . These findings demonstrate the potential of utilizing a hybridized, heterogeneous surface layer as a cost-effective catalytic and protective interface for solar hydrogen production.

14 SOLAR ENERGY↗
DOE OSTI2016

Atomic Scale Understanding of Poly-Si/SiO2/c-Si Passivated Contacts: Passivation Degradation Due to Metallization

The key attributes for achieving high efficiency crystalline silicon solar cells include class leading developments in the ability to approach the theoretical limits of silicon solar technology (29.4% efficiency). The push for high efficiency devices is further compounded with the clear need for passivation to reduce recombination at the metal contacts. At the same time there is stringent requirement to retain the same material device quality, surface passivation, and performance characteristics following subsequent processing. The development of passivated silicon cell structures that retain active front and rear surface passivation and overall material cell quality is therefore a relevant and active area of development. To address the potential outcomes of metallization on passivated silicon stack, we report on some common microstructural features of degradation due to metallization for a series of silicon device stacks. A fundamental materials understanding of the metallization process on retaining high-efficiency passivated Si devices is therefore gained over these series of results.

14 SOLAR ENERGY↗
DOE OSTI2016

Combined effects of radiation damage and He accumulation on bubble nucleation in Gd2Ti2O7

Pyrochlores have long been considered as host phases for long-term immobilization of radioactive waste nuclides that would undergo ..alpha..-decay for hundreds of thousands of years. This work utilizes ion-beam irradiations to examine the combined effects of radiation damage and He accumulation on bubble formation in Gd2Ti2O7 over relevant waste-form timescales. Helium bubbles are not observed in pre-damaged Gd2Ti2O7 implanted with 2 x 1016 He/cm2, even after post-implantation irradiations with 7 MeV Au3+ at 300, 500, and 700 K. However, He bubbles with average diameters of 1.5 nm and 2.1 nm are observed in pre-damaged (amorphous) Gd2Ti2O7 and pristine Gd2Ti2O7, respectively, after implantation of 2 x 1017 He/cm2. The critical He concentration for bubble nucleation in Gd2Ti2O7 is estimated to be 6 at.% He.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2016

Sodium accumulation at potential-induced degradation shunted areas in polycrystalline silicon modules

Here, we investigated potential-induced degradation (PID) in silicon mini-modules that were subjected to accelerated stressing to induce PID conditions. Shunted areas on the cells were identified with photoluminescence and dark lock-in thermography (DLIT) imaging. The identical shunted areas were then analyzed via time-of-flight secondary-ion mass spectrometry (TOFSIMS) imaging, 3-D tomography, and high-resolution transmission electron microscopy. The TOF-SIMS imaging indicates a high concentration of sodium in the shunted areas, and 3-D tomography reveals that the sodium extends more than 2 um from the surface below shunted regions. Transmission electron microscopy investigation reveals that a stacking fault is present at an area identified as shunted by DLIT imaging. After the removal of surface sodium, tomography reveals persistent sodium present around the junction depth of 300 nm and a drastic difference in sodium content at the junction when comparing shunted and nonshunted regions.

14 SOLAR ENERGY↗
DOE OSTI2016

Bubble Formation and Lattice Parameter Changes Resulting from He Irradiation of Defect-Fluorite Gd2Zr2O7

Pyrochlores have long been considered as potential candidates for advanced ceramic waste-forms for the immobilization of radioactive waste nuclides. This work provides evidence that Gd2Zr2O7, often considered the most radiation tolerant pyrochlore, could be susceptible to radiation damage in the form of bubble nucleation at the highest He doses expected over geological time. Ion irradiations were utilized to experimentally simulate the radiation damage and He accumulation produced by ..alpha..-decay. Samples were pre-damaged using 7 MeV Au3+ to induce the pyrochlore to defect-fluorite phase transformation, which would occur due to ..alpha..-recoil damage within several hundred years of storage in a Gd2Zr2O7 waste-form. These samples were then implanted to various He concentrations in order to study the long-term effects of He accumulation. Helium bubbles 1-3 nm in diameter were observed in TEM at a concentration of 4.6 at.% He. Some bubbles remained isolated, while others formed chains 10-30 nm in length parallel to the surface. GIXRD measurements showed lattice swelling after irradiating pristine Gd2Zr2O7 with 7 MeV Au3+ to a fluence of 2.2 x 1015 Au/cm2. An increase in lattice swelling was also measured after 2.2 x 1015 Au/cm2 + 2 x 1015 He/cm2 and 2.2 x 1015 Au/cm2 + 2 x 1016 He/cm2. A decrease in lattice swelling was measured after irradiation with 2.2 x 1015 Au/cm2 + 2 x 1017 He/cm2, the fluence where bubbles and bubble chains were observed in TEM. Bubble chains are thought to form in order to reduce lattice strain normal to the surface, which is produced by the Au and He irradiation damage.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Effect of Water Vapor, Temperature, and Rapid Annealing on Formamidinium Lead Triiodide Perovskite Crystallization

Perovskite-based solar cells are one of the emerging candidates for radically lower cost photovoltaics. Herein, we report on the synthesis and crystallization of organic-inorganic formamidinium lead triiodide perovskite films under controlled atmospheric and environmental conditions. Using in situ (scanning) transmission electron microscopy, we make observations of the crystallization process of these materials in nitrogen and oxygen gas with and without the presence of water vapor. Complementary planar samples were also fabricated in the presence of water vapor and characterized by in situ X-ray diffraction. Direct observations of the material structure and final morphology indicate that the exposure to water vapor results in a porous film that is metastable, regardless of the presence of argon, nitrogen, or oxygen. However, the optimal crystallization temperature of 175 °C is unperturbed across conditions. Rapid modulation about the annealing temperature of 175 °C in ±25 °C steps (150-200 °C) promotes crystallization and significantly improves the film morphology by overcoming the presence of impregnated water trapped in the material. Following this processing protocol, we demonstrate substantial growth to micron-size grains via observation inside of an environmentally controlled transmission electron microscope. Adapting this insight from our in situ microscopy, we are able to provide an informed materials protocol to control the structure and morphology of these organic-inorganic semiconductors, which is readily applicable to benchtop device growth strategies.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Revealing Surface Modifications of Potassium-Fluoride-Treated Cu(In,Ga)Se 2 : A Study of Material Structure, Chemistry, and Photovoltaic Performance

The effects of alkali post-deposition treatments and device properties for polycrystalline thin film Cu(In,Ga)Se2 have been investigated. It is reported that these surface treatments lead to differences in interface chemistry and device properties. The behavior of defects in the space charge region as a function of different growth parameters is investigated by correlative analytical microscopy. The latter combines electron microscopy based imaging, Kelvin probe force microscopy, and atom probe tomography. Alkali treatments lead to copper depletion and consequent sharpening of the compositional profiles, and the measured electric potential differences of exposed Cu(In1-x,Gax)Se2 surfaces. Measurable differences in resistivity and potential have also been observed, which are expected to relate to the improved open-circuit voltage, fill-factor, and device efficiency. This study frames one perspective as to why post-deposition alkaline treatments lead to copper depletion, a mildly n-type semiconductor interface, and higher efficiency for a Cu(In,Ga)Se2 thin-film photovoltaic device.

14 SOLAR ENERGY↗